By Transphorm 76
Transphorm's TP65H035WS 650 V, 35 mΩ GaN FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies, offering superior reliability and performance.
Transphorm's GaN features improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
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