• 1200V XPT IGBTs

    These IGBTs retain a positive temperature coefficient of its collector to emitter saturation voltage for ease of parallel configuration.

    By IXYS 190

  • Q3-Class HiPerFET™ Power MOSFETs

    Features lower gate-to-drain charge and lower gate resistance, thus reducing switching losses with faster switching, and lowering gate drive power consumption.

    By IXYS 202

  • 650 V XPT™ Trench IGBTs

    Designed to minimize conduction and switching losses in hard-switching applications.

    By IXYS 154

  • Linear L2™ MOSFETs

    IXYS/Littelfuse Linear L2™ MOSFETs are a distinguished class of rugged Power MOSFETs tailored specifically for applications that require Power MOSFETs to operate in their current saturation region

    By IXYS 90

  • GigaMOS™ TrenchT2™ Power MOSFETs

    Promotes device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications.

    By IXYS 93

  • 600 V GenX3SC™ IGBTs

    IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies.

    By IXYS 86

  • PolarP2™ Power MOSFETs

    Allows for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.

    By IXYS 128

  • 900 V Polar HiPerFET™ Power MOSFETs

    Provides improved power efficiency and reliability for demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.

    By IXYS 101

  • Depletion-Mode D2™ Power MOSFETs

    Available with blocking voltages between 500 V to 1000 V, on-resistance (Rdson) as low as 500 mΩ (max), and drain current ratings of up to 6 A.

    By IXYS 77

  • 600 V XPT IGBTs

    Tailored to address market demands for highly rugged, low loss semiconductor devices that offer the ability to be easily configured in parallel.

    By IXYS 107

  • PolarP3™ Power MOSFETs

    PolarP3™ power MOSFETs feature low on-state resistance (Rdson) and gate charge (Qg). Available in two voltage grades of 500 V and 600 V grade.

    By IXYS 113

  • GigaMOS™ Power MOSFETs

    Provides designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications.

    By IXYS 112

  • DT-Triac™ Technology Platform

    The IXYS/Littelfuse DT-Triac™ is designed for line-frequency applications and three-quadrant operation, namely quadrants I to III.

    By IXYS 76

  • IXIDM1401_1505_O High-Voltage, Dual-Channel, Isola

    IXYS Corporation (IXYS), a global manufacturer of power semiconductors and ICs for energy efficiency, power management, transportation, medical, and motor control applications, features a 10 A / 4

    By IXYS 83

  • 200 V Ultra-Junction X3-Class HiPerFET™ Power MOSF

    IXYS Corporation/Littelfuse's HiPerFET™ power MOSFETs are 200 V ultra-junction X3-class featuring low on-resistance and ultra-low gate charge.

    By IXYS 60

  • 300 V Ultra-Junction X3-Class HiPerFET™ Power MOSF

    IXYS introduces their power semiconductor product line: 300 V ultra-junction X3-class HiPerFET™ power MOSFETs.

    By IXYS 83

  • 1000 V Ultra-Junction X-Class HiPerFET™ Power MOSF

    The 1000 V Ultra-Junction X-Class HiPerFET Power MOSFETs from IXYS LLC, now part of Littelfuse, are optimized for soft-switching power conversion applications.

    By IXYS 71

  • 150 V N-Channel X4-Class Ultra-Junction Power MOSF

    IXYS' power semiconductor device developed using a charge compensation principle and proprietary process technology significantly reduces resistance RDS(ON).

    By IXYS 71

  • IXOLAR™ High Efficiency SolarBIT

    Suitable for industrial applications, portable instrumentation, portable battery powered tools, and portable medical devices.

    By IXYS 165

  • 4500 V Power MOSFETs

    Features high blocking voltage, proprietary high voltage ISOPLUS™, up to 4500 V electrical isolation (DCB), and UL 94 V-0 flammability qualified.

    By IXYS 111