IXYS/Littelfuse Linear L2™ MOSFETs are a distinguished class of rugged Power MOSFETs tailored specifically for applications that require Power MOSFETs to operate in their current saturation region
By IXYS 1167
Promotes device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications.
By IXYS 1204
IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies.
By IXYS 1358
Allows for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
By IXYS 1467
Provides improved power efficiency and reliability for demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.
By IXYS 1489
Available with blocking voltages between 500 V to 1000 V, on-resistance (Rdson) as low as 500 mΩ (max), and drain current ratings of up to 6 A.
By IXYS 1140
Tailored to address market demands for highly rugged, low loss semiconductor devices that offer the ability to be easily configured in parallel.
By IXYS 1369
Linear Technology's LT3090 is a low-dropout negative linear regulator that is easily parallelable to increase output current or spread heat on surface-mounted boards.
By Analog Devices Inc 622
NXP’s TEA172x family is a series of small, low-cost module switched mode power supply (SMPS) that are tailored for low-power applications up to 5 W or 11 W.
By NXP Semiconductors 1112
PolarP3™ power MOSFETs feature low on-state resistance (Rdson) and gate charge (Qg). Available in two voltage grades of 500 V and 600 V grade.
By IXYS 1287
Provides designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications.
By IXYS 1294
IRFH7185TRPbF 100 V FastIRFET delivers benchmark performance in power supply applications.
By Infineon Technologies 923
NXP's next-gen GreenChip device enables low current consumption, high efficiency, and reduces the BOM.
By NXP Semiconductors 974
AD531x, AD568x, and AD569x nanoDAC® are quad 10-, 12-, and 16-bit 3 V/5 D/A converters in TSSOP packages.
By Analog Devices Inc 732
The TI ADS8319 ADC's power consumption is directly scaled with speed, making it optimized for low power consumption for low speed applications.
By Texas Instruments 917
Vishay's MOSFET provides higher isolation and VIORM and VIOTM creepage and clearance distances for industrial control and power conversion applications.
By Vishay Semiconductor / Opto Division 1058
The complete switching power stage, from ON Semiconductor, is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON).
By ON Semiconductor 1264
ON Semiconductor's SuperFET II series is optimized for high-efficiency in high-frequency switching applications.
By ON Semiconductor 905
Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
By NXP Semiconductors 1130
Rectifiers from Vishay offer high current density and low forward voltage drop, which reduce power loss and improve efficiency.
By Vishay Semiconductor/Diodes Division 1210