SA110 Silicon Carbide Half H-Bridge Module

By Apex Microtechnology 105

SA110 Silicon Carbide Half H-Bridge Module

Apex Microtechnology’s SA110 high-current, high-voltage half H-bridge switching module utilizes silicon carbide (SiC) MOSFETs with integrated gate drive. The SA110 features integrated gate drive control, a very high 400 kHz maximum switching frequency, and 28 A of continuous output current in the A grade variant.

The availability of high-performance, reliable wide bandgap (WBG) power devices based on SiC processes is redefining the world of higher-power amplifier-design possibilities and products. SiC MOSFETs offer lower on-resistance versus both temperature and current levels, better current versus voltage performance, and lower switching losses.

This hybrid is offered in a 12-pin PSIP package to provide a compact footprint along with protection features. With the integration of the gate drive, switching speeds are greatly improved as parasitic impacts are reduced and easier to control. SA110 is ideal for applications where a focus is on over temperature performance, high efficiency, and compact design.

  • High continuous output current: 20 A (28 A grade A variant)
  • High supply voltage: 400 V
  • Fast switching frequency: 400 kHz
  • Integrated with digitally-controlled gate drive
  • Undervoltage lockout and active Miller clamping
  • DC motors
  • DC/DC converters
  • Sonar
  • General Purpose

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