STGWA40IH65DF Insulated-Gate Bipolar Transistor (I

By STMicroelectronics 109

STGWA40IH65DF Insulated-Gate Bipolar Transistor (I

STMicroelectronics' IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

  • Designed for soft commutation only
  • Maximum junction temperature: TJ = 175°C
  • VCE(sat) = 1.5 V (typ.) @ IC = 40 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Low drop voltage freewheeling co-packaged diode
  • Positive VCE(sat) temperature coefficient