Silicon Carbide (SiC) MOSFETs

By ON Semiconductor 226

Silicon Carbide (SiC) MOSFETs

ON Semiconductor's silicon carbide (SiC) MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Technical Documentation
  • SiC MOSFETs: Gate Drive Optimization
Application Note
  • Application of SiC MOSFETs
  • 1200 V rated
  • Max RDS(ON) = 110 mΩ at VGS = 20 V, ID = 20 A
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC−Q101
  • PFC
  • OBC
  • Boost inverters
  • PV charging
End Products
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

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