NV6113 650 V Single GaNFast™ Power IC (300 mΩ)

By Navitas Semiconductor 113

NV6113 650 V Single GaNFast™ Power IC (300 mΩ)

The NV6113 650 V GaNFast power IC from Navitas is optimized for high-frequency, soft-switching topologies. Monolithic integration of FET, drive, and logic creates an easy-to-use digital-in/power-out high-performance powertrain building block, enabling designers to create fast, small, and efficient power converters. High dV/dt immunity, high-speed integrated drive, and industry-standard low-profile, low-inductance 5 mm x 6 mm SMT QFN packaging allow designers to exploit Navitas' GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, and resonant to MHz+ and enable the commercial introduction of breakthrough designs.

  • GaNFast power IC
    • Monolithically-integrated gate drive
    • Wide logic input range with hysteresis
    • 5 V/15 V input-compatible
    • Wide VCC range (10 V to 30 V)
    • Programmable turn-on dV/dt
    • 200 V/ns dV/dt immunity
    • 650 V eMode GaN FET
    • Low 300 mΩ resistance
    • Zero reverse recovery charge
    • 2 MHz operation
  • Small, low-profile SMT QFN
    • 5 mm x 6 mm footprint, 0.85 mm profile
    • Minimized package inductance
  • Environmental
    • RoHS
    • Pb-free
    • REACH-compliant
  • AC-DC, DC-DC, and DC-AC
  • Buck, boost, half bridge, and full bridge
  • Active clamp flybacks, LLC resonant, and class D
  • Mobile fast chargers and adapters
  • Notebook adaptors
  • LED lighting and solar micro-inverters
  • TV/monitor and wireless power
  • Server, telecom, and networking SMPS

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