Isolated Gate Driver Plus GaN FET Reference Design

By Silicon Labs 185

Isolated Gate Driver Plus GaN FET Reference Design

Silicon Labs' isolation technology simplifies design and offers the industry's best timing characteristics, highest reliability, and lowest emissions. Customers rely on our solutions to achieve higher system efficiency, higher noise immunity, improve safety, and reduce footprint. These reference designs were developed to enable quick customer adoption and accelerated time-to-market.

Silicon Lab's partnership with EPC enables designers to take advantage of reference designs that simplify the evaluation process of eGAN FETs. These reference designs feature half-bridge topology with on-board gate drives and include all the critical components and layout for optimal switching performance. Most of the boards can be used to easily develop a working prototype and require only the LC output filter and terminals to be added.

Key Features
  • Low latency: 10 ns typical
  • CMTI 50 kV/μs typical
  • UL, CSA, and VDE certified isolation: 2.5 kV, 3.75 kV, and 5 kV options
  • 60-year life at rated working voltage
  • AEC-Q100 qualification
Applications
  • DC-DC converters
  • Power inverters
  • Class D audio amplifiers
  • Solar inverters
  • Motor drive

EPC Half Bridge Plus Driver Development Tools

Half-bridge development boards simplify the evaluation process of these eGaN FETs by including all the critical components and layout for optimal switching performance on a single board that can be easily connected into any existing converter.

Silicon Labs' Included Digital Isolator

The Silicon Labs Si86xx digital isolators are the industry's highest performing, widest channel count series of unidirectional and bidirectional isolators supporting up to reinforced 5 kVrms isolation ratings. Based on our patented CMOS isolation technology, Si86xx isolators enable robust operation in harsh industrial applications.

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