 | |  | |
| PartNumber | SIR800DP-T1-GE3 | SIR800ADP-T1-GE3 | SIR800ADP-T1-RE3 |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIR | SIR | SIR |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIR800DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 177 A | 177 A |
| Rds On Drain Source Resistance | - | 1.35 mOhms | 1.35 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 600 mV | 0.6 V |
| Vgs Gate Source Voltage | - | 12 V, - 8 V | - 8 V, 12 V |
| Qg Gate Charge | - | 53 nC | 53 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 62.5 W | 62.5 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel |
| Forward Transconductance Min | - | 60 S | 60 S |
| Fall Time | - | 10 ns | 10 ns |
| Rise Time | - | 13 ns | 13 ns |
| Typical Turn Off Delay Time | - | 40 ns | 40 ns |
| Typical Turn On Delay Time | - | 20 ns | 20 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR836DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | |
| SIR804DP-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR826DP-T1-GE3 | MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET | ||
| SIR800DP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR800ADP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR800ADP-T1-RE3 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 | ||
| SIR826ADP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR812DP-T1-GE3 | MOSFET 30V 60A 104W 1.45mohm @ 10V | ||
| SIR826BDP-T1-RE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR820DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR800DP-T1-RE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR826DP-T1-RE3 | MOSFET 80V Vds TrenchFET PowerPAK SO-8 | ||
| SIR802DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3 | ||
| SIR818DP-T1-GE3 | MOSFET 30 Volts 50 Amps 69 Watts | ||
| SIR808DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3 | ||
Vishay |
SIR812DP-T1-GE3 | IGBT Transistors MOSFET 30V 60A 104W 1.45mohm @ 10V | |
| SIR808DP-T1-GE3 | RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts | ||
| SIR800DP-T1-GE3 | MOSFET N-CH 20V 50A PPAK SO-8 | ||
| SIR802DP-T1-GE3 | MOSFET N-CH 20V 30A PPAK SO-8 | ||
| SIR804DP-T1-GE3 | MOSFET N-CH 100V 60A PPAK SO-8 | ||
| SIR814DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 | ||
| SIR818DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | ||
| SIR820DP-T1-GE3 | MOSFET N-CH 30V 40A POWERPAKSO-8 | ||
| SIR826ADP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIR826DP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIR836DP-T1-GE3 | MOSFET N-CH 40V 21A PPAK SO-8 | ||
| SIR800ADP-T1-GE3 | N-Channel 20-V (D-S) MOSFET PowerPAK SO-8 1G SG DUV 2 mil , 1.35 m @ 10V m @ 7.5V 1.75 m @ 4.5V | ||
| SIR800ADP-T1-RE3 | MOSFET N-CH 20V POWERPAK SO8 SNG | ||
| SIR800DP-T1-RE3 | MOSFET N-CH 20V 50A POWERPAKSO-8 | ||
| SIR826BDP-T1-RE3 | N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 5.1 m @ 10V 4.9 m @ 7.5V m @ 4.5V | ||
| SIR826DP-T1-RE3 | MOSFET N-CH 80V 60A POWERPAKSO-8 | ||
| SIR836DP-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SIR800 | नयाँ र मौलिक | ||
| SIR800DP | नयाँ र मौलिक | ||
| SIR802DP | नयाँ र मौलिक | ||
| SIR802DP-T1-E3 | नयाँ र मौलिक | ||
| SIR808DP | नयाँ र मौलिक | ||
| SIR808DP-T1-E3 | नयाँ र मौलिक | ||
| SIR81004F00A1 | नयाँ र मौलिक | ||
| SIR818DP | नयाँ र मौलिक | ||
| SIR818DP-T1-E3 | नयाँ र मौलिक | ||
| SIR820DP | नयाँ र मौलिक | ||
| SIR820DP-T1-E3 | नयाँ र मौलिक | ||
| SIR82609 | नयाँ र मौलिक | ||
| SIR826DP | नयाँ र मौलिक | ||
| SIR8313C | नयाँ र मौलिक | ||
| SIR836DP | नयाँ र मौलिक | ||
| SIR836DP-T1-E3 | नयाँ र मौलिक | ||
| SIR836DPT1GE3 | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIR838DP-T1-E3 | नयाँ र मौलिक |