SIR826DP-T1-GE3

Mfr. #:: SIR826DP-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIR826DP-T1-GE3 डाटा पाना
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HTML Datasheet:: SIR826DP-T1-GE3 Datasheet SIR826DP-T1-GE3 Datasheet (P4-P6)SIR826DP-T1-GE3 Datasheet (P7-P9)SIR826DP-T1-GE3 Datasheet (P10-P12)SIR826DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:: SIR826DP-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 80 V

आईडी - निरन्तर ड्रेन वर्तमान:: 60 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 4.8 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.2 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 60 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 104 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

उचाइ:: 1.04 mm

लम्बाइ:: 6.15 mm

शृङ्खला:: SIR

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 5.15 mm

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 80 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 11 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 36 ns

सामान्य टर्न-अन ढिलाइ समय:: 12 ns

भाग # उपनाम:: SIR826DP-GE3

एकाइ वजन:: 0.017870 oz

Tags: SIR826D, SIR826, SIR82, SIR8, SIR

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR826DP-T1-GE3 विवरण

***ure Electronics: SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8

***ical: Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 80V 60A PPAK SO-8

***: N-CHANNEL 80-V (D-S)

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; No. Of Pins:8Pins Rohs Compliant: Yes

***nell: MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

***ment14 APAC: MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIR826DP-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIR826DP-T1-GE3 DISTI # V72:2272_09216024	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R RoHS: Compliant	0
SIR826DP-T1-GE3 DISTI # V36:1790_09216024	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000000:$1.5540 1500000:$1.5550 300000:$1.5810 30000:$1.6110 3000:$1.6160
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5990In Stock	1000:$1.4898 500:$1.7980 100:$2.1884 10:$2.7230 1:$3.0300
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5990In Stock	1000:$1.4898 500:$1.7980 100:$2.1884 10:$2.7230 1:$3.0300
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$1.2968 3000:$1.3466
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.2180 18000:$1.2516 12000:$1.2873 6000:$1.3418 3000:$1.3828
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€1.0289 18000:€1.0879 12000:€1.2249 6000:€1.4859 3000:€2.1209
SIR826DP-T1-GE3 DISTI # 94T2658	Vishay Intertechnologies	MOSFET, N CH, 80V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$1.7700 500:$2.0600 250:$2.3600 100:$2.6500 50:$2.9300 25:$3.1700 1:$3.3300
SIR826DP-T1-GE3. DISTI # 15AC4249	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes	0	30000:$1.2200 18000:$1.2600 12000:$1.2900 6000:$1.3500 1:$1.3900
SIR826DP-T1-GE3 DISTI # 78-SIR826DP-T1-GE3	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	7407	1:$2.9500 10:$2.4500 100:$1.9000 500:$1.6600 1000:$1.3700 3000:$1.2800
SIR826DP-T1-GE3	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET	Americas - 3000	3000:$1.3080 6000:$1.2650 12000:$1.2020 24000:$1.1650
SIR826DP-T1-GE3.	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	Americas - 3000	10:$2.2050 100:$1.7110 250:$1.6020 500:$1.4940 1000:$1.4580

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: INA226AIDGSR OMO.#: OMO-INA226AIDGSR	Current & Power Monitors & Regulators Hi-Side Msmt,Bi-Dir Current/Pwr Mon
	Mfr.#: 1N4148W-7-F OMO.#: OMO-1N4148W-7-F	Diodes - General Purpose, Power, Switching SURFACE MOUNT FAST SWITCHING DIODE
	Mfr.#: SI7469DP-T1-E3 OMO.#: OMO-SI7469DP-T1-E3	MOSFET -80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: LT8641EUDC#PBF OMO.#: OMO-LT8641EUDC-PBF	Switching Voltage Regulators 65V, 3.5A Synchronous Step-Down Silent Switcher with 2.5 A Quiescent Current
	Mfr.#: ERA-3AEB104V OMO.#: OMO-ERA-3AEB104V	Thin Film Resistors - SMD 0603 1/10W 100Kohms
	Mfr.#: ERA-3AEB104V OMO.#: OMO-ERA-3AEB104V-PANASONIC	Thin Film Resistors - SMD 0603 1/10W 100Kohms
	Mfr.#: INA226AIDGSR OMO.#: OMO-INA226AIDGSR-TEXAS-INSTRUMENTS	Current & Power Monitors & Regulators Hi-Side Msmt,Bi-Dir Current/Pwr Mon
	Mfr.#: 45985-4413 OMO.#: OMO-45985-4413-673	Heavy Duty Power Connectors LPH Plug Assy RtAn 0 4 Pwr 12 Sig P and G
	Mfr.#: SI7469DP-T1-E3 OMO.#: OMO-SI7469DP-T1-E3-VISHAY	MOSFET P-CH 80V 28A PPAK SO-8
	Mfr.#: CGA2B3X7R1H104K050BB OMO.#: OMO-CGA2B3X7R1H104K050BB-TDK	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.1uF 50volts X7R +/-10%

उपलब्धता

स्टक:: Available
अर्डर मा:: 1991
मात्रा प्रविष्ट गर्नुहोस्:

SIR826DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.९५~~; ~~US$ २.९५~~

10: ~~US$ २.४५~~; ~~US$ २४.५०~~

100: ~~US$ १.९०~~; ~~US$ १९०.००~~

500: ~~US$ १.६६~~; ~~US$ ८३०.००~~

1000: ~~US$ १.३७~~; ~~US$ १ ३७०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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SIR826DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes