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SIR836DP-T1-GE3

SIR836DP-T1-GE3
Mfr. #:
SIR836DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR836DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR836DP-T1-GE3 DatasheetSIR836DP-T1-GE3 Datasheet (P4-P6)SIR836DP-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
21 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
19 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
11.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
15.6 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIR
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
35 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
15 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns
भाग # उपनाम:
SIR836DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SIR836DP-T, SIR836, SIR83, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR836DP Series N-Channel 40 V 0.0225 Ohm 15.6 W SMT Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 40V 21A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 40V 21A PPAK SO-8
***ark
N-CHANNEL 40-V (D-S) MOSFET
***
N-CHANNEL 40-V (D-S)
भाग # Mfg। विवरण स्टक मूल्य
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3350
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.6559
    • 6000:€0.4469
    • 12000:€0.3849
    • 18000:€0.3549
    • 30000:€0.3309
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.3049
    • 6000:$0.2959
    • 12000:$0.2839
    • 18000:$0.2759
    • 30000:$0.2689
    SIR836DP-T1-GE3
    DISTI # 05W6931    		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes0
    • 1:$0.6070
    • 10:$0.5880
    • 100:$0.4650
    • 250:$0.4410
    • 500:$0.4120
    • 1000:$0.3300
    SIR836DP-T1-GE3
    DISTI # 86R3808    		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3110
    • 3000:$0.3090
    • 6000:$0.2940
    • 12000:$0.2610
    SIR836DP-T1-GE3
    DISTI # 78-SIR836DP-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		446
    • 1:$0.8400
    • 10:$0.6700
    • 100:$0.5090
    • 500:$0.4200
    • 1000:$0.3360
    • 3000:$0.3050
    • 6000:$0.2840
    SIR836DPT1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SIR836DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		Americas - 51000
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        उपलब्धता
        स्टक:
        42
        अर्डर मा:
        2025
        मात्रा प्रविष्ट गर्नुहोस्:
        SIR836DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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