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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SIR836DP-T1-GE3 DISTI # V72:2272_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 57 |
|
| SIR836DP-T1-GE3 DISTI # V36:1790_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 0 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 3642In Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 3642In Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| SIR836DP-T1-GE3 DISTI # 33693676 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 3000 |
|
| SIR836DP-T1-GE3 DISTI # 32440685 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 57 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIR836DP-T1-GE3 DISTI # 86R3808 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR836DP-T1-GE3 DISTI # 05W6931 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR836DP-T1-GE3 DISTI # 78-SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 21093 |
|
| SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | Americas - 63000 |
|
| SIR836DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SIR872ADP-T1-GE3 OMO.#: OMO-SIR872ADP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3 |
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Mfr.#: SIR880DP-T1-GE3 OMO.#: OMO-SIR880DP-T1-GE3 |
MOSFET 80V Vds 20V Vgs PowerPAK SO-8 |
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Mfr.#: SIR876DP-T1-GE3 OMO.#: OMO-SIR876DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3 |
|
Mfr.#: SIR872DP-T1-GE3 OMO.#: OMO-SIR872DP-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch |
|
Mfr.#: SIR882ADP-T1-GE3-CUT TAPE |
नयाँ र मौलिक |
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Mfr.#: SIR836DP-T1-E3 OMO.#: OMO-SIR836DP-T1-E3-1190 |
नयाँ र मौलिक |
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Mfr.#: SIR860-T1-GE3 OMO.#: OMO-SIR860-T1-GE3-1190 |
नयाँ र मौलिक |
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Mfr.#: SIR882DP-T1-GE3/R882 |
नयाँ र मौलिक |
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Mfr.#: SIR890DP-T1-GE3 OMO.#: OMO-SIR890DP-T1-GE3-VISHAY |
MOSFET N-CH 20V 50A PPAK SO-8 |
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Mfr.#: SIR800DP-T1-RE3 OMO.#: OMO-SIR800DP-T1-RE3-VISHAY |
MOSFET N-CH 20V 50A POWERPAKSO-8 |