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SIR808DP-T1-GE3

SIR808DP-T1-GE3
Mfr. #:
SIR808DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR808DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR808DP-T1-GE3 DatasheetSIR808DP-T1-GE3 Datasheet (P4-P6)SIR808DP-T1-GE3 Datasheet (P7-P9)SIR808DP-T1-GE3 Datasheet (P10-P12)SIR808DP-T1-GE3 Datasheet (P13)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIR
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIR808DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SIR808, SIR80, SIR8, SIR
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous
***et
N-CH POWERPAK SO-8 BWL 25V 7.4 MOHM@10V
***nell
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
भाग # Mfg। विवरण स्टक मूल्य
SIR808DP-T1-GE3
DISTI # SIR808DP-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 25V 20A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIR808DP-T1-GE3
    DISTI # 78-SIR808DP-T1-GE3    		Vishay IntertechnologiesMOSFET 25 Volts 20 Amps 29.8 Watts
    RoHS: Compliant    		0
      छवि भाग # विवरण
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts
      SIR808DP

      Mfr.#: SIR808DP

      OMO.#: OMO-SIR808DP-1190

      		 नयाँ र मौलिक
      SIR808DP-T1-E3

      Mfr.#: SIR808DP-T1-E3

      OMO.#: OMO-SIR808DP-T1-E3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIR808DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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