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SIR812DP-T1-GE3

SIR812DP-T1-GE3
Mfr. #:
SIR812DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V 60A 104W 1.45mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR812DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR812DP-T1-GE3 DatasheetSIR812DP-T1-GE3 Datasheet (P4-P6)SIR812DP-T1-GE3 Datasheet (P7-P9)SIR812DP-T1-GE3 Datasheet (P10-P12)SIR812DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:
SIR812DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIR
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIR812DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SIR81, SIR8, SIR
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 48.9A 8-Pin PowerPAK SO T/R (Alt: SIR812DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIR812DP-T1-GE3
    DISTI # 99W9564    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.6960
    • 3000:$0.6910
    • 6000:$0.6580
    • 12000:$0.5830
    SIR812DP-T1-GE3
    DISTI # 04X9744    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$1.3600
    • 10:$1.3200
    • 100:$1.0400
    • 250:$0.9870
    • 500:$0.9220
    • 1000:$0.7380
    SIR812DP-T1-GE3
    DISTI # 78-SIR812DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant    		436
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8940
    • 1000:$0.7850
    • 3000:$0.7840
    SIR812DP-T1-GE3
    DISTI # 2283689    		Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
    RoHS: Compliant    		4
    • 5:£1.1300
    • 25:£1.0300
    • 100:£0.7870
    • 250:£0.7320
    • 500:£0.6760
    SIR812DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant    		Americas -
      SIR812DP-T1-GE3
      DISTI # 2283689      		Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
      RoHS: Compliant      		4
      • 1:$2.6200
      • 10:$2.1600
      • 100:$1.6500
      • 500:$1.4200
      • 1000:$1.2400
      • 3000:$1.2400
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      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIR812DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.६४
      US$ १.६४
      10
      US$ १.३५
      US$ १३.५०
      100
      US$ १.०३
      US$ १०३.००
      500
      US$ ०.८९
      US$ ४४६.५०
      1000
      US$ ०.७०
      US$ ७०४.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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