SIR

SIR800ADP-T1-GE3 vs SIR800ADP-T1-RE3 vs SIR798DP-T1-GE3

 
PartNumberSIR800ADP-T1-GE3SIR800ADP-T1-RE3SIR798DP-T1-GE3
DescriptionMOSFET 20V Vds 12V Vgs PowerPAK SO-8MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8MOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current177 A177 A-
Rds On Drain Source Resistance1.35 mOhms1.35 mOhms-
Vgs th Gate Source Threshold Voltage600 mV0.6 V-
Vgs Gate Source Voltage12 V, - 8 V- 8 V, 12 V-
Qg Gate Charge53 nC53 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation62.5 W62.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel TrenchFET Power MOSFET1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min60 S60 S-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time13 ns13 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time20 ns20 ns-
Height--1.04 mm
Length--6.15 mm
Width--5.15 mm
Part # Aliases--SIR798DP-GE3
Unit Weight--0.017870 oz
  • बाट सुरु गर्नुहोस्
  • SIR 693
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR804DP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SIR826DP-T1-GE3 MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
SIR800DP-T1-GE3 MOSFET 20V Vds 12V Vgs PowerPAK SO-8
SIR800ADP-T1-GE3 MOSFET 20V Vds 12V Vgs PowerPAK SO-8
SIR800ADP-T1-RE3 MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8
SIR826ADP-T1-GE3 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
SIR812DP-T1-GE3 MOSFET 30V 60A 104W 1.45mohm @ 10V
SIR826BDP-T1-RE3 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
SIR820DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIR800DP-T1-RE3 MOSFET 20V Vds 12V Vgs PowerPAK SO-8
SIR826DP-T1-RE3 MOSFET 80V Vds TrenchFET PowerPAK SO-8
SIR802DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3
SIR818DP-T1-GE3 MOSFET 30 Volts 50 Amps 69 Watts
SIR808DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
SIR798DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR812DP-T1-GE3 IGBT Transistors MOSFET 30V 60A 104W 1.45mohm @ 10V
SIR808DP-T1-GE3 RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts
SIR788DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
SIR798DP-T1-GE3 MOSFET N-CH 30V 60A POWERPAKSO-8
SIR800DP-T1-GE3 MOSFET N-CH 20V 50A PPAK SO-8
SIR802DP-T1-GE3 MOSFET N-CH 20V 30A PPAK SO-8
SIR804DP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
SIR814DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8
SIR818DP-T1-GE3 MOSFET N-CH 30V 50A PPAK SO-8
SIR820DP-T1-GE3 MOSFET N-CH 30V 40A POWERPAKSO-8
SIR826ADP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
SIR826DP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
SIR800ADP-T1-GE3 N-Channel 20-V (D-S) MOSFET PowerPAK SO-8 1G SG DUV 2 mil , 1.35 m @ 10V m @ 7.5V 1.75 m @ 4.5V
SIR800ADP-T1-RE3 MOSFET N-CH 20V POWERPAK SO8 SNG
SIR800DP-T1-RE3 MOSFET N-CH 20V 50A POWERPAKSO-8
SIR826BDP-T1-RE3 N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 5.1 m @ 10V 4.9 m @ 7.5V m @ 4.5V
SIR826DP-T1-RE3 MOSFET N-CH 80V 60A POWERPAKSO-8
SIR788DPT1GE3 Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SIR798DP-T1-E3 नयाँ र मौलिक
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