 | | | |
| PartNumber | SIRA00DP-T1-GE3 | SIRA00DP-T1-RE3 | SIR892DP-T1-GE3 |
| Description | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV | MOSFET 30V Vds TrenchFET PowerPAK SO-8 | MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 830 uOhms | 830 uOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V | - |
| Qg Gate Charge | 220 nC | 220 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 104 W | 104 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | 1.04 mm |
| Length | 6.15 mm | - | 6.15 mm |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | 5.15 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 140 S | 140 S | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 14 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 67 ns | 67 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | SIRA00DP-GE3 | - | SIR892DP-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA01DP-T1-GE3 | MOSFET -30V Vds 16V Vgs PowerPAK SO-8 | |
| SIRA12BDP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA04DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA02DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA00DP-T1-GE3 | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV | ||
| SIRA10DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA06DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA00DP-T1-RE3 | MOSFET 30V Vds TrenchFET PowerPAK SO-8 | ||
| SIRA10DP-T1-GE3. | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV | ||
| SIR892DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 | ||
Everlight |
SIR928-6C-F | Infrared Emitters Infrared LED | |
| SIR928-6C-F | Infrared Emitters Infrared LED | ||
Vishay |
SIR892DP-T1-GE3 | IGBT Transistors MOSFET 25V 50A 50W 3.2mohm @ 10V | |
| SIRA10BDP-T1-GE3 | MOSFET N-CHAN 30V | ||
| SIRA01DP-T1-GE3 | MOSFET P-CH 30V POWERPAK SO-8 | ||
| SIRA00DP-T1-GE3 | MOSFET N-CH 30V 100A PPAK SO-8 | ||
| SIRA02DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | ||
| SIRA04DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK SO-8 | ||
| SIRA06DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK SO-8 | ||
| SIRA10DP-T1-GE3 | MOSFET N-CH 30V 60A PPAK SO-8 | ||
| SIRA00DP-T1-RE3 | MOSFET N-CH 30V 100A POWERPAKSO | ||
| SIRA00DP-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SIRA04DP-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SIRA06DP-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SIR892DP-T1-E3 | नयाँ र मौलिक | ||
| SIR892DP-T1-GE3-S | नयाँ र मौलिक | ||
| SIR8C36M8 | नयाँ र मौलिक | ||
| SIR908-7C/F1-R/TR1 | नयाँ र मौलिक | ||
| SIR908-7C/F1/TR1 | नयाँ र मौलिक | ||
| SIR908-7C/TR1 | नयाँ र मौलिक | ||
| SIR908-7P/F1-R/TR1 | नयाँ र मौलिक | ||
| SIR91 | नयाँ र मौलिक | ||
| SIR91-21C | नयाँ र मौलिक | ||
| SIR91-21C/L11 | नयाँ र मौलिक | ||
| SIR91-21C/TR10 | नयाँ र मौलिक | ||
| SIR91-21C/TR9 | नयाँ र मौलिक | ||
| SIR95-21C/TR10 | नयाँ र मौलिक | ||
| SIRA00DP | नयाँ र मौलिक | ||
| SIRA00DP-TI-GE3 | नयाँ र मौलिक | ||
| SIRA02 | नयाँ र मौलिक | ||
| SIRA02DP | नयाँ र मौलिक | ||
| SIRA04DP | नयाँ र मौलिक | ||
| SIRA04DPT1GE3 | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIRA06DP | नयाँ र मौलिक | ||
| SIRA06DP-T1 | नयाँ र मौलिक | ||
| SIRA06DP-T1-GE3 PB-FREE | नयाँ र मौलिक | ||
| SIRA06DP-TE-GE3 | नयाँ र मौलिक | ||
| SIRA10DP | नयाँ र मौलिक | ||
| SIRA10DP-T1-E3 | नयाँ र मौलिक | ||
| SIRA12 | नयाँ र मौलिक |