 | |  | |
| PartNumber | IPB057N06NATMA1 | IPB05CN10N G | IPB05N03LA |
| Description | MOSFET N-Ch 60V 45A D2PAK-2 | MOSFET N-Ch 100V 100A D2PAK-2 | MOSFET N-CH 25V 80A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | - |
| Id Continuous Drain Current | 45 A | 100 A | - |
| Rds On Drain Source Resistance | 4.9 mOhms | 5.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 32 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 83 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 36 S | - | - |
| Fall Time | 7 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 42 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 64 ns | - |
| Typical Turn On Delay Time | 12 ns | 28 ns | - |
| Part # Aliases | IPB057N06N IPB57N6NXT SP000962140 | IPB05CN10NGXT SP000096440 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB065N03LGATMA1 | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | |
| IPB065N15N3GATMA1 | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB067N08N3 G | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB065N10N3GATMA1 | MOSFET MV POWER MOS | ||
| IPB065N15N3 G | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB057N06NATMA1 | MOSFET N-Ch 60V 45A D2PAK-2 | ||
| IPB060N15N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| IPB060N15N5ATMA1 | MOSFET N-CH 150V 136A TO263-7 | ||
| IPB065N10N3GATMA1 | MOSFET N-CH TO263-3 | ||
| IPB05N03LB | MOSFET N-CH 30V 80A D2PAK | ||
| IPB05CN10N G | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB05N03LA | MOSFET N-CH 25V 80A D2PAK | ||
| IPB05N03LA G | MOSFET N-CH 25V 80A D2PAK | ||
| IPB05N03LAT | MOSFET N-CH 25V 80A D2PAK | ||
| IPB05N03LB G | MOSFET N-CH 30V 80A TO-263 | ||
| IPB065N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | ||
| IPB065N06L G | MOSFET N-CH 60V 80A D2PAK | ||
| IPB065N15N3GATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB065N15N3GE8187ATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB067N08N3GATMA1 | MOSFET N-CH 80V 80A TO263-3 | ||
| IPB06CN10N G | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB057N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 45A D2PAK-2 | ||
Infineon Technologies |
IPB05CN10N G | MOSFET N-Ch 100V 100A D2PAK-2 | |
| IPB065N10N3GATMA1-CUT TAPE | नयाँ र मौलिक | ||
| IPB065N15N3GATMA1-CUT TAPE | नयाँ र मौलिक | ||
| IPB065N15N3GXT | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1) | ||
| IPB065N15N3GE818XT | MOSFET | ||
| IPB057N06N3 G | नयाँ र मौलिक | ||
| IPB057N07N | नयाँ र मौलिक | ||
| IPB05CN10NG | नयाँ र मौलिक | ||
| IPB05N03 | नयाँ र मौलिक | ||
| IPB05N03AL | नयाँ र मौलिक | ||
| IPB05N03L | नयाँ र मौलिक | ||
| IPB05N03L E3045 | नयाँ र मौलिक | ||
| IPB05N03L E3045A | नयाँ र मौलिक | ||
| IPB05N03LA IPB05N03L | नयाँ र मौलिक | ||
| IPB05N03LAG | MOSFET N-Ch 25V 80A D2PAK-2 | ||
| IPB0630-4R7M | नयाँ र मौलिक | ||
| IPB065N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
| IPB065N03LG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB065N06L | नयाँ र मौलिक | ||
| IPB065N06LG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB065N15N | नयाँ र मौलिक | ||
| IPB065N15N3 | नयाँ र मौलिक | ||
| IPB065N15N3G | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 | ||
| IPB065N15N3GE8197ATMA1 | (Alt: SP001227194) | ||
| IPB065N15N3GS | नयाँ र मौलिक | ||
| IPB067N08N3 G | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB067N08N3G | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 | ||
| IPB065N15N3 G | RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 |