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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| IPB065N03LGATMA1 DISTI # V72:2272_06384772 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1510 |
|
| IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 11927In Stock |
|
| IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 11927In Stock |
|
| IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 11000In Stock |
|
| IPB065N03LGATMA1 DISTI # 26195584 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1510 |
|
| IPB065N03LGXT DISTI # IPB065N03LGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB065N03LGATMA1 DISTI # SP000254709 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB065N03LGATMA1 DISTI # 47W3466 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes | 553 |
|
| IPB065N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1000 |
|
| IPB065N03LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 2000 |
|
| IPB065N03L G DISTI # 726-IPB065N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1908 |
|
| IPB065N03LGATMA1 DISTI # 726-IPB065N03LGATMA1 | Infineon Technologies AG | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 2886 |
|
| IPB065N03LGATMA1 DISTI # C1S322000626490 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1510 |
|
| IPB065N03LGATMA1 DISTI # 2212897 | Infineon Technologies AG | MOSFET, N-CH, 30V, 50A, TO-263-3 RoHS: Compliant | 553 |
|
| IPB065N03LGATMA1 DISTI # 2212897 | Infineon Technologies AG | MOSFET, N-CH, 30V, 50A, TO-263-3 RoHS: Compliant | 553 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: IPB065N15N3 G OMO.#: OMO-IPB065N15N3-G |
MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 |
|
Mfr.#: IPB06N03LA G OMO.#: OMO-IPB06N03LA-G |
MOSFET N-Ch 25V 50A D2PAK-2 |
|
Mfr.#: IPB060N15N5ATMA1 |
MOSFET N-CH 150V 136A TO263-7 |
|
Mfr.#: IPB06N03LB G |
MOSFET N-CH 30V 50A D2PAK |
|
|
Mfr.#: IPB065N03LG OMO.#: OMO-IPB065N03LG-1190 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB065N15N3GE8197ATMA1 |
(Alt: SP001227194) |
|
|
Mfr.#: IPB067N08N3G OMO.#: OMO-IPB067N08N3G-1190 |
Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 |
|
|
Mfr.#: IPB06CNE8NG OMO.#: OMO-IPB06CNE8NG-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: IPB06N03LB |
MOSFET N-CH 30V 50A D2PAK |
|
|
Mfr.#: IPB065N15N3 G OMO.#: OMO-IPB065N15N3-G-317 |
RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 |