IPB067N08N3 G

IPB067N08N3 G
Mfr. #:
IPB067N08N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB067N08N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB067N08N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.7 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
136 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
66 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
31 ns
सामान्य टर्न-अन ढिलाइ समय:
16 ns
भाग # उपनाम:
IPB067N08N3GATMA1 IPB67N8N3GXT SP000443636
एकाइ वजन:
0.068654 oz
Tags
IPB067, IPB06, IPB0, IPB
Service Guarantees

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB067N08N3GATMA1
DISTI # V72:2272_06383547
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
998
  • 500:$1.3241
  • 250:$1.6255
  • 100:$1.6424
  • 25:$2.0594
  • 10:$2.0801
  • 1:$2.5724
IPB067N08N3GATMA1
DISTI # V36:1790_06383547
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.8604
  • 500000:$0.8620
  • 100000:$0.9567
  • 10000:$1.1010
  • 1000:$1.1250
IPB067N08N3GATMA1
DISTI # IPB067N08N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4122In Stock
  • 500:$1.3979
  • 100:$1.7014
  • 10:$2.1170
  • 1:$2.3600
IPB067N08N3GATMA1
DISTI # IPB067N08N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4122In Stock
  • 500:$1.3979
  • 100:$1.7014
  • 10:$2.1170
  • 1:$2.3600
IPB067N08N3GATMA1
DISTI # IPB067N08N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
4000In Stock
  • 10000:$0.9823
  • 5000:$1.0082
  • 2000:$1.0470
  • 1000:$1.1245
IPB067N08N3GATMA1
DISTI # 32688433
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$0.9067
IPB067N08N3GATMA1
DISTI # 26195208
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
998
  • 6:$2.5724
IPB067N08N3G
DISTI # 30593807
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263
RoHS: Compliant
90
  • 12:$2.1750
IPB067N08N3GXT
DISTI # IPB067N08N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB067N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.9379
  • 6000:$0.9549
  • 4000:$0.9879
  • 2000:$1.0249
  • 1000:$1.0639
IPB067N08N3GATMA1
DISTI # SP000443636
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin TO-263 T/R (Alt: SP000443636)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€0.8029
  • 6000:€0.8609
  • 4000:€0.9269
  • 2000:€1.0039
  • 1000:€1.2049
IPB067N08N3 G
DISTI # 726-IPB067N08N3G
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
RoHS: Compliant
1318
  • 1:$2.1700
  • 10:$1.8400
  • 100:$1.4700
  • 500:$1.2900
  • 1000:$1.0700
  • 2000:$0.9980
  • 5000:$0.9610
IPB067N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
1000
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
IPB067N08N3GATMA1
DISTI # 1107099P
Infineon Technologies AGMOSFET N-CHANNEL OPTIMOS-3 80V 80A TO263, RL490
  • 500:£0.8510
  • 200:£0.9800
  • 50:£1.0960
IPB067N08N3GATMA1
DISTI # 2443381
Infineon Technologies AGMOSFET, N CH, 80V, 80A, TO-263-3
RoHS: Compliant
0
  • 2000:$1.5000
  • 1000:$1.6100
  • 500:$1.9400
  • 100:$2.2200
  • 5:$2.7700
IPB067N08N3GATMA1
DISTI # 2443381RL
Infineon Technologies AGMOSFET, N CH, 80V, 80A, TO-263-3
RoHS: Compliant
0
  • 2000:$1.5000
  • 1000:$1.6100
  • 500:$1.9400
  • 100:$2.2200
  • 5:$2.7700
IPB067N08N3 G
DISTI # TMOSP9690
Infineon Technologies AGN-CH80V80A7mOhm TO263-3
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.3600
  • 2000:$1.2000
  • 3000:$1.0509
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OMO.#: OMO-TLC2272CDR-TEXAS-INSTRUMENTS

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Mfr.#: TLC272CDR

OMO.#: OMO-TLC272CDR-TEXAS-INSTRUMENTS

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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
IPB067N08N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.१७
US$ २.१७
10
US$ १.८४
US$ १८.४०
100
US$ १.४७
US$ १४७.००
500
US$ १.२९
US$ ६४५.००
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