 |  | | |
| PartNumber | IPB06N03LA G | IPB06N03LA | IPB06N03LAT |
| Description | MOSFET N-Ch 25V 50A D2PAK-2 | MOSFET N-CH 25V 50A D2PAK | MOSFET N-CH 25V 50A D2PAK |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | MOSFET (Metal Oxide) | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | TO-263-3, DPak (2 Leads + Tab), TO-263AB | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 9.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Cut Tape (CT) | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 58 S / 29 S | - | - |
| Fall Time | 4.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Series | - | OptiMOS | - |
| Part Status | - | Obsolete | - |
| FET Type | - | N-Channel | - |
| Drain to Source Voltage (Vdss) | - | 25V | - |
| Current Continuous Drain (Id) @ 25°C | - | 50A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V | - |
| Vgs(th) (Max) @ Id | - | 2V @ 40A | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 22nC @ 5V | - |
| Vgs (Max) | - | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 2653pF @ 15V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 83W (Tc) | - |
| Rds On (Max) @ Id, Vgs | - | 5.9 mOhm @ 30A, 10V | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TO263-3-2 | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB072N15N3 G | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | |
| IPB072N15N3GATMA1 | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | ||
| IPB073N15N5ATMA1 | MOSFET | ||
| IPB073N15N5ATMA1 | MV POWER MOS | ||
| IPB06N03LB G | MOSFET N-CH 30V 50A D2PAK | ||
| IPB070N06L G | MOSFET N-CH 60V 80A TO-263 | ||
| IPB06P001LATMA1 | TRENCH 40<-<100V | ||
| IPB06N03LA | MOSFET N-CH 25V 50A D2PAK | ||
| IPB06N03LA G | MOSFET N-CH 25V 50A D2PAK | ||
| IPB06N03LAT | MOSFET N-CH 25V 50A D2PAK | ||
| IPB06N03LB | MOSFET N-CH 30V 50A D2PAK | ||
| IPB072N15N3GATMA1 | MOSFET N-CH 150V 100A TO263-3 | ||
| IPB072N15N3GE8187ATMA1 | MOSFET N-CH 150V 100A TO263-3 | ||
| IPB075N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 | ||
Infineon Technologies |
IPB06N03LA G | MOSFET N-Ch 25V 50A D2PAK-2 | |
| IPB072N15N3G | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263 | ||
| IPB072N15N3G 072N15N | नयाँ र मौलिक | ||
| IPB06N03LBG | नयाँ र मौलिक | ||
| IPB06CN10NG | नयाँ र मौलिक | ||
| IPB06CNE8NG | नयाँ र मौलिक | ||
| IPB06N03 | नयाँ र मौलिक | ||
| IPB06N03LA 06N03LA | नयाँ र मौलिक | ||
| IPB06N03LA,06N03LA,IPB06 | नयाँ र मौलिक | ||
| IPB06N03LA/TO-252/INFINE | नयाँ र मौलिक | ||
| IPB06N03LAG | नयाँ र मौलिक | ||
| IPB06N03LAP | नयाँ र मौलिक | ||
| IPB06S60C | नयाँ र मौलिक | ||
| IPB070N06LG | नयाँ र मौलिक | ||
| IPB070N06N G | नयाँ र मौलिक | ||
| IPB072N15N | नयाँ र मौलिक | ||
| IPB072N15N3 | नयाँ र मौलिक | ||
| IPB072N15N3 G | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263 | ||
| IPB072N15N3 G E8187 | नयाँ र मौलिक | ||
| IPB072N15N3 G FDB075N1 | नयाँ र मौलिक | ||
| IPB072N15N3 G(SP00038666 | नयाँ र मौलिक | ||
| IPB072N15N3G , 2SD1935 | नयाँ र मौलिक | ||
| IPB072N15N3G(SP000386664 | नयाँ र मौलिक | ||
| IPB073N15N5 | Trans MOSFET N-CH 150V 114A 3-Pin TO-263 T/R (Alt: IPB073N15N5) | ||
| IPB075N04L | नयाँ र मौलिक | ||
| IPB075N04LG | Power Field-Effect Transistor, 50A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB07N03 | नयाँ र मौलिक | ||
| IPB07N03L | 80 A, 30 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| IPB07N03L (PSI) | नयाँ र मौलिक | ||
| IPB07N03L 07N03L | नयाँ र मौलिक | ||
| IPB07N03L E3045A | नयाँ र मौलिक | ||
| IPB07N03LAG | नयाँ र मौलिक | ||
| IPB07N03LE3045A | नयाँ र मौलिक | ||
| IPB07N03LG | नयाँ र मौलिक | ||
| IPB080N03L | नयाँ र मौलिक | ||
| IPB075N04L G | IGBT Transistors MOSFET N-Ch 40V 50A D2PAK-2 |