IPB065N03LGATMA1

Mfr. #:: IPB065N03LGATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB065N03LGATMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 50 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 5.4 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 11 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 56 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 34 S

पतन समय:: 3.4 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 4.2 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 21 ns

सामान्य टर्न-अन ढिलाइ समय:: 5.5 ns

भाग # उपनाम:: G IPB065N03L IPB65N3LGXT SP000254709

एकाइ वजन:: 0.139332 oz

Tags: IPB065N03, IPB065N0, IPB065, IPB06, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB065N03LGATMA1 विवरण

***ark: MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: Single N-Channel 30 V 6.5 mOhm 23 nC OptiMOS Power Mosfet - D2PAK

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Diss

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA

***ure Electronics: N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA

*** Source Electronics: MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:30V; On Resistance

***roFlash: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W

***ure Electronics: Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***emi: PowerTrench® MOSFET, N-Channel, 30V, 55A, 11.5mΩ

***r Electronics: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel

***ark: PT7 N 30/20 and PT8 N 30/12 S in Power Stage56 - 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

*** Stop Electro: Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

***nell: MOSFET, N-CH, 30V, 18A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB065N03LGATMA1 DISTI # V72:2272_06384772	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	159	100:$0.7924 25:$0.9188 10:$1.0209 1:$1.3160
IPB065N03LGATMA1 DISTI # V36:1790_06384772	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.4316 500000:$0.4319 100000:$0.4602 10000:$0.5114 1000:$0.5200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11822In Stock	500:$0.7613 100:$0.9216 10:$1.1820 1:$1.3200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11822In Stock	500:$0.7613 100:$0.9216 10:$1.1820 1:$1.3200
IPB065N03LGATMA1 DISTI # IPB065N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	11000In Stock	10000:$0.4980 5000:$0.5174 2000:$0.5446 1000:$0.5835
IPB065N03LGATMA1 DISTI # 26195584	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	159	14:$1.3160
IPB065N03LGATMA1 DISTI # SP000254709	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.4619 6000:€0.4919 4000:€0.5409 2000:€0.6059 1000:€0.7769
IPB065N03LGXT DISTI # IPB065N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.4699 6000:$0.4789 4000:$0.4949 2000:$0.5139 1000:$0.5329
IPB065N03LGATMA1 DISTI # 47W3466	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	0	500:$0.7110 100:$0.8050 10:$1.0400 1:$1.2200
IPB065N03LGATMA1 DISTI # 726-IPB065N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	2728	1:$1.2100 10:$1.0300 100:$0.7970 500:$0.7040 1000:$0.5560 2000:$0.4930 10000:$0.4750
IPB065N03L G DISTI # 726-IPB065N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	1910	1:$1.2100 10:$1.0300 100:$0.7970 500:$0.7040 1000:$0.5560 2000:$0.4930 10000:$0.4750
IPB065N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2000	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
IPB065N03LGATMA1 DISTI # 2212897	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-263-3 RoHS: Compliant	133	2000:$0.7430 1000:$0.8380 500:$1.0600 100:$1.2000 10:$1.5500 1:$1.8200
IPB065N03LGATMA1 DISTI # 2212897	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-263-3	533	500:£0.3250 250:£0.3470 100:£0.3690 25:£0.4760 5:£0.5300

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: INA139NA/3K OMO.#: OMO-INA139NA-3K	Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
	Mfr.#: DRV8313PWPR OMO.#: OMO-DRV8313PWPR	Motor / Motion / Ignition Controllers & Drivers 2.5A DC Motor Drvr 3 Phase Brushless
	Mfr.#: BQ7692006PWR OMO.#: OMO-BQ7692006PWR	Battery Management Li-Ion, Li-Phosphate Battery Moniter
	Mfr.#: STM32L073CZT6 OMO.#: OMO-STM32L073CZT6	ARM Microcontrollers - MCU 16/32-BITS MICROS
	Mfr.#: UP3-MIBV-4-CM OMO.#: OMO-UP3-MIBV-4-CM	USB Connectors USB 3.0 micro B plug 10pin Vert cable mnt
	Mfr.#: NTCLE100E3103JB0 OMO.#: OMO-NTCLE100E3103JB0	NTC Thermistors 10Kohms 5% Radial
	Mfr.#: AA1206JR-070RL OMO.#: OMO-AA1206JR-070RL	Thick Film Resistors - SMD ZERO Ohm ANTI SULFUR AEC-Q200
	Mfr.#: 1455L1201BU OMO.#: OMO-1455L1201BU	Enclosures, Boxes, & Cases Metal End Panel/Blue 4.72 x 1.20 x 4.06"
	Mfr.#: NTCLE100E3103JB0 OMO.#: OMO-NTCLE100E3103JB0-VISHAY	Thermistors - NTC 10Kohms 5% Radial
	Mfr.#: INA139NA/3K OMO.#: OMO-INA139NA-3K-TEXAS-INSTRUMENTS	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 1985
मात्रा प्रविष्ट गर्नुहोस्:

IPB065N03LGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.२१~~; ~~US$ १.२१~~

10: ~~US$ १.०३~~; ~~US$ १०.३०~~

100: ~~US$ ०.८०~~; ~~US$ ७९.७०~~

500: ~~US$ ०.७०~~; ~~US$ ३५२.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IPB065N03 3
IPB065N0 6
IPB065 19
IPB06 41
IPB0 405
IPB 1339

नवीनतम उत्पादनहरू

XC6227 Series Regulator

Torex's XC6227 series is a high-speed LDO regulator with the ability to operate with high accuracy, low noise, and high ripple rejection.
XMC4700 and XMC4800 Family of Microcontrollers

Infineon Technologies’ XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
TLF502x1EL Step-Down DC / DC

Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
Compare IPB065N03LGATMA1

IPB065N03LG vs IPB065N03LGATMA1 vs IPB065N06L
XC9261 Series Step-Down DC/DC Converters

Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
LITIX™ Automotive LED Driver ICs

LITIX automotive LED driver ICs from Infineon use a constant-current regulator that enables stable brightness over the whole automotive temperature and voltage range.

More Newest Products

IPB065N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes