IGT60R190D1SATMA1

Mfr. #:: IGT60R190D1SATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET 600V CoolGaN Power Transistor
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IGT60R190D1SATMA1 डाटा पाना
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ECAD Model:
थप जानकारी:: IGT60R190D1SATMA1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: GaN

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PG-HSOF-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 600 V

आईडी - निरन्तर ड्रेन वर्तमान:: 12.5 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 190 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 0.9 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 3.2 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 55.5 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: CoolGaN

प्याकेजिङ:: रील

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Infineon टेक्नोलोजीहरू

पतन समय:: 12 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 5 ns

कारखाना प्याक मात्रा:: 2000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 12 ns

सामान्य टर्न-अन ढिलाइ समय:: 11 ns

भाग # उपनाम:: SP001701702

Tags: IGT60, IGT6, IGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGT60R190D1SATMA1 थप जानकारी

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IGT60R190D1SATMA1 DISTI # V72:2272_22710693	Infineon Technologies AG	IGT60R190D1SATMA1	4055	3000:$8.2850 1000:$8.6090 500:$8.9330 250:$9.2560 100:$10.1350 25:$11.4900 10:$11.8430 1:$13.0200
IGT60R190D1SATMA1 DISTI # V36:1790_22710693	Infineon Technologies AG	IGT60R190D1SATMA1	0	2000000:$7.2580 1000000:$7.2610 200000:$7.6100 20000:$8.2630 2000:$8.3740
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	510In Stock	1000:$8.9618 500:$9.7704 100:$10.9832 10:$13.0050 1:$14.1500
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	510In Stock	1000:$8.9618 500:$9.7704 100:$10.9832 10:$13.0050 1:$14.1500
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$8.3737
IGT60R190D1SATMA1 DISTI # 32361396	Infineon Technologies AG	IGT60R190D1SATMA1	4055	3000:$8.2850 1000:$8.6090 500:$8.9330 250:$9.2560 100:$10.1350 25:$11.4900 10:$11.8430 1:$13.0200
IGT60R190D1SATMA1 DISTI # SP001701702	Infineon Technologies AG	GAN HV (Alt: SP001701702) RoHS: Compliant Min Qty: 2000	Europe - 100	20000:€6.8900 12000:€7.3900 8000:€7.8900 4000:€8.2900 2000:€8.5900
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1	Infineon Technologies AG	GAN HV - Tape and Reel (Alt: IGT60R190D1SATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$7.8900 12000:$7.9900 8000:$8.2900 4000:$8.5900 2000:$8.8900
IGT60R190D1SATMA1 DISTI # 84AC1772	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	2158	1000:$8.3700 500:$9.1300 250:$9.7600 100:$10.2600 50:$10.9500 25:$11.6500 10:$12.1500 1:$13.2100
IGT60R190D1SATMA1 DISTI # 726-IGT60R190D1SATMA	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	2156	1:$13.0800 10:$12.0300 25:$11.5300 100:$10.1600 250:$9.6600 500:$9.0400 1000:$8.2900 2000:$7.4800
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1	Infineon Technologies AG	Transistor: N-JFET,CoolGaN™,unipolar,600V,12.5A,Idm:23A,55.5W	7	10:$12.2900 3:$13.8700 1:$15.4400
IGT60R190D1SATMA1 DISTI # 2981534	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W	658	100:£7.3600 50:£7.8600 10:£8.3600 5:£9.4800 1:£9.9600
IGT60R190D1SATMA1 DISTI # 2981534	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W RoHS: Compliant	658	250:$12.4700 100:$14.7600 50:$15.9000 10:$16.9800 5:$19.2200 1:$21.0400

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IGT60R070D1ATMA1 OMO.#: OMO-IGT60R070D1ATMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGO60R070D1AUMA1 OMO.#: OMO-IGO60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGOT60R070D1AUMA1 OMO.#: OMO-IGOT60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGLD60R070D1AUMA1 OMO.#: OMO-IGLD60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IPT65R195G7XTMA1 OMO.#: OMO-IPT65R195G7XTMA1	MOSFET
	Mfr.#: GS66502B-E01-MR OMO.#: OMO-GS66502B-E01-MR	MOSFET 650V Enhancement Mode Transistor
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: GS66504B-E01-MR OMO.#: OMO-GS66504B-E01-MR	MOSFET 650V 15A E-Mode GaN
	Mfr.#: 1EDF5673FXUMA1 OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES	IC DRIVER IC GAN DSO-16-11
	Mfr.#: 1EDS5663HXUMA1 OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES	IC DRIVER IC GAN DSO-16

उपलब्धता

स्टक:: Available
अर्डर मा:: 1985
मात्रा प्रविष्ट गर्नुहोस्:

IGT60R190D1SATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १३.०८~~; ~~US$ १३.०८~~

10: ~~US$ १२.०३~~; ~~US$ १२०.३०~~

25: ~~US$ ११.५३~~; ~~US$ २८८.२५~~

100: ~~US$ १०.१६~~; ~~US$ १ ०१६.००~~

250: ~~US$ ९.६६~~; ~~US$ २ ४१५.००~~

500: ~~US$ ९.०४~~; ~~US$ ४ ५२०.००~~

1000: ~~US$ ८.२९~~; ~~US$ ८ २९०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

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IGT60R190D1SATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes