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IGT60R070D1ATMA1

IGT60R070D1ATMA1
Mfr. #:
IGT60R070D1ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET 600V CoolGaN Power Transistor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IGT60R070D1ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IGT60R070D1ATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
GaN
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-HSOF-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
31 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
70 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
0.9 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
5.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolGaN
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
13 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
13 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
भाग # उपनाम:
SP001300364
Tags
IGT60, IGT6, IGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
भाग # Mfg। विवरण स्टक मूल्य
IGT60R070D1ATMA1
DISTI # V72:2272_22710692		Infineon Technologies AGIGT60R070D1ATMA13961
  • 3000:$15.3900
  • 1000:$15.4000
  • 250:$15.4100
  • 100:$15.4200
  • 25:$19.6300
  • 10:$20.0500
  • 1:$22.0400
IGT60R070D1ATMA1
DISTI # V36:1790_22710692		Infineon Technologies AGIGT60R070D1ATMA10
  • 1000000:$13.4800
  • 200000:$14.0500
  • 20000:$15.1900
  • 2000:$15.3900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		609In Stock
  • 500:$17.2689
  • 100:$19.0208
  • 10:$22.2740
  • 1:$24.1500
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		609In Stock
  • 500:$17.2689
  • 100:$19.0208
  • 10:$22.2740
  • 1:$24.1500
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$15.3890
IGT60R070D1ATMA1
DISTI # 32361397		Infineon Technologies AGIGT60R070D1ATMA13961
  • 3000:$15.3900
  • 1000:$15.4000
  • 250:$15.4100
  • 100:$15.4200
  • 25:$19.6300
  • 10:$20.0500
  • 1:$22.0400
IGT60R070D1ATMA1
DISTI # SP001300364		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 8-Pin HSOF (Alt: SP001300364)
RoHS: Compliant
Min Qty: 2000		Europe - 100
  • 20000:€12.7900
  • 12000:€13.6900
  • 8000:€14.7900
  • 4000:€15.3900
  • 2000:€15.9900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 8-Pin HSOF - Tape and Reel (Alt: IGT60R070D1ATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$14.6900
  • 12000:$14.8900
  • 8000:$15.3900
  • 4000:$15.9900
  • 2000:$16.5900
IGT60R070D1ATMA1
DISTI # 84AC1771		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes1992
  • 1000:$14.0300
  • 500:$16.1300
  • 250:$16.9500
  • 100:$17.7700
  • 50:$18.8200
  • 25:$19.8800
  • 10:$20.8100
  • 1:$22.5500
IGT60R070D1ATMA1
DISTI # 726-IGT60R070D1ATMA1		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		2160
  • 1:$22.3300
  • 5:$22.1000
  • 10:$20.6000
  • 25:$19.6800
  • 100:$17.5900
  • 250:$16.7800
  • 500:$15.9700
  • 1000:$13.8900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
  • 10:$22.5500
  • 3:$25.5900
  • 1:$28.4100
IGT60R070D1ATMA1
DISTI # 2981532		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant		1992
  • 2000:$23.1500
  • 500:$25.6600
  • 100:$26.5000
  • 50:$28.9100
  • 1:$31.8100
  • 10:$31.8100
IGT60R070D1ATMA1
DISTI # 2981532		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W1974
  • 100:£13.6900
  • 50:£14.5100
  • 10:£15.3200
  • 5:£17.2000
  • 1:£17.3800
IGT60R070D1ATMA1
DISTI # XSKDRABV0044851		Infineon Technologies AGDFlip-Flop,4000/14000/40000Series,2-Func,PositiveEdgeTriggered,1-Bit,ComplementaryOutput, CMOS,PDSO14
RoHS: Compliant		80 in Stock0 on Order
  • 80:$20.2700
  • 33:$21.7200
छवि भाग # विवरण
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

OMO.#: OMO-IGT60R190D1SATMA1

 MOSFET 600V CoolGaN Power Transistor
IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

 MOSFET 600V CoolGaN Power Transistor
IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

OMO.#: OMO-IGOT60R070D1AUMA1

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IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

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Mfr.#: PGA26E19BA

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GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

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1EDF5673FXUMA1

Mfr.#: 1EDF5673FXUMA1

OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

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LMG3411R070RWHT

Mfr.#: LMG3411R070RWHT

OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

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IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

 IC GAN FET 600V 60A 20DSO
GS66508T-E02-MR

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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
IGT60R070D1ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २२.३३
US$ २२.३३
5
US$ २२.१०
US$ ११०.५०
10
US$ २०.६०
US$ २०६.००
25
US$ १९.६८
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100
US$ १७.५९
US$ १ ७५९.००
250
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US$ ४ १९५.००
500
US$ १५.९७
US$ ७ ९८५.००
1000
US$ १३.८९
US$ १३ ८९०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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