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GS66508T-E02-MR

GS66508T-E02-MR
Mfr. #:
GS66508T-E02-MR
निर्माता:
GaN Systems
विवरण:
MOSFET 650V 30A E-Mode GaN
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS66508T-E02-MR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS66508T-E02-MR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GaN प्रणाली
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
GaN
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
GaNPX-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
30 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
55 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.7 V
Vgs - गेट-स्रोत भोल्टेज:
7 V
Qg - गेट चार्ज:
5.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
0.54 mm
लम्बाइ:
7 mm
उत्पादन:
MOSFET
शृङ्खला:
GS6650x
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.5 mm
ब्रान्ड:
GaN प्रणाली
नमी संवेदनशील:
हो
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
भाग # उपनाम:
GS66508T-E02-MR
Tags
GS66508T, GS66508, GS6650, GS665, GS66, GS6
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
भाग # Mfg। विवरण स्टक मूल्य
GS66508T-E02-MR
DISTI # 499-GS66508T-E02-MR		GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant		3144
  • 1:$16.2500
  • 10:$15.7300
  • 25:$14.9900
  • 250:$13.9200
GS66508T-E02-MR
DISTI # GS66508T-E02-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		750
  • 250:$12.9800
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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
GS66508T-E02-MR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १६.२५
US$ १६.२५
10
US$ १५.७३
US$ १५७.३०
25
US$ १४.९९
US$ ३७४.७५
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