IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
Mfr. #:
IGLD60R070D1AUMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET 600V CoolGaN Power Transistor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IGLD60R070D1AUMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IGLD60R070D1AUMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
GaN
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-LSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
15 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
70 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
0.9 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
5.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
114 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolGaN
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
13 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
15 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
भाग # उपनाम:
SP001705420
Tags
IGL
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
भाग # Mfg। विवरण स्टक मूल्य
IGLD60R070D1AUMA1
DISTI # V72:2272_22710689
Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1TR-ND
Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$15.1523
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1CT-ND
Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1DKR-ND
Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # 32436883
Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1
Infineon Technologies AGGAN HV - Tape and Reel (Alt: IGLD60R070D1AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    IGLD60R070D1AUMA1
    DISTI # SP001705420
    Infineon Technologies AGGAN HV (Alt: SP001705420)
    RoHS: Compliant
    Min Qty: 3000
    Europe - 0
    • 30000:€13.2900
    • 18000:€13.8900
    • 12000:€14.5900
    • 6000:€14.7900
    • 3000:€15.2900
    IGLD60R070D1AUMA1
    DISTI # 84AC1768
    Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes167
    • 1000:$13.8200
    • 500:$15.8900
    • 250:$16.6900
    • 100:$17.4900
    • 50:$18.5300
    • 25:$19.5600
    • 10:$20.4800
    • 1:$22.2100
    IGLD60R070D1AUMA1
    DISTI # 726-IGLD60R070D1AUMA
    Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
    RoHS: Compliant
    158
    • 1:$21.9900
    • 5:$21.7600
    • 10:$20.2800
    • 25:$19.3700
    • 100:$17.3200
    • 250:$16.5200
    • 500:$15.7300
    • 1000:$13.6800
    IGLD60R070D1AUMA1
    DISTI # 2981535
    Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W
    RoHS: Compliant
    167
    • 3000:$22.8000
    • 500:$25.2600
    • 100:$26.1000
    • 50:$28.4700
    • 1:$31.3200
    • 10:$31.3200
    IGLD60R070D1AUMA1
    DISTI # 2981535
    Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W147
    • 100:£12.5600
    • 50:£13.3000
    • 10:£14.0400
    • 5:£15.7700
    • 1:£15.9400
    छवि भाग # विवरण
    STL3N65M2

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    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR

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    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT

    Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    CRD-5FF0912P

    Mfr.#: CRD-5FF0912P

    OMO.#: OMO-CRD-5FF0912P

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    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7

    MOSFET N-channel 60 V, 0.0046 Ohm typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
    LMG1020YFFR

    Mfr.#: LMG1020YFFR

    OMO.#: OMO-LMG1020YFFR

    Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT-TEXAS-INSTRUMENTS

    LMG1020YFFR BEARCAT 6-PIN WCSP
    GS66502B-E01-MR

    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR-1190

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    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7-STMICROELECTRONICS

    MOSFET N-CH 60V 100A
    उपलब्धता
    स्टक:
    149
    अर्डर मा:
    2132
    मात्रा प्रविष्ट गर्नुहोस्:
    IGLD60R070D1AUMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २१.९९
    US$ २१.९९
    5
    US$ २१.७६
    US$ १०८.८०
    10
    US$ २०.२८
    US$ २०२.८०
    25
    US$ १९.३७
    US$ ४८४.२५
    100
    US$ १७.३२
    US$ १ ७३२.००
    250
    US$ १६.५२
    US$ ४ १३०.००
    500
    US$ १५.७३
    US$ ७ ८६५.००
    1000
    US$ १३.६८
    US$ १३ ६८०.००
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