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GS66502B-E01-MR

GS66502B-E01-MR
Mfr. #:
GS66502B-E01-MR
निर्माता:
GaN Systems
विवरण:
MOSFET 650V Enhancement Mode Transisto
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS66502B-E01-MR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS66502B-E01-MR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
GaN प्रणाली
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
प्रविधि
GaN
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
10 V
आईडी-निरन्तर-नाली-वर्तमान
7.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
650 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
1.6 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
560 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
1.7 nC
च्यानल-मोड
वृद्धि
Tags
GS6650, GS665, GS66, GS6
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS66502B 650V GaN Transistor
GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
भाग # Mfg। विवरण स्टक मूल्य
GS66502B-E01-MR
DISTI # 499-GS66502B-E01-MR		GaN SystemsMOSFET 650V Enhancement Mode Transistor
RoHS: Compliant		1533
  • 1:$9.3500
  • 10:$9.0500
  • 25:$8.6300
  • 250:$8.0000
  • 1000:$7.7800
GS66502B-E01-MR
DISTI # GS66502B-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		750
  • 250:$7.6900
छवि भाग # विवरण
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

 MOSFET 650V Enhancement Mode Transisto
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
GS66502B-E01-MR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
US$ ०.००
100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
US$ ०.००
US$ ०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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