GS66502B-E01-MR

GS66502B-E01-MR
Mfr. #:
GS66502B-E01-MR
निर्माता:
GaN Systems
विवरण:
MOSFET 650V Enhancement Mode Transistor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS66502B-E01-MR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS66502B-E01-MR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GaN प्रणाली
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
GaN
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
GaNPX-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
7.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
200 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.3 V
Vgs - गेट-स्रोत भोल्टेज:
7 V
Qg - गेट चार्ज:
1.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
0.51 mm
लम्बाइ:
6.6 mm
उत्पादन:
MOSFET
शृङ्खला:
GS6650x
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5 mm
ब्रान्ड:
GaN प्रणाली
नमी संवेदनशील:
हो
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
भाग # उपनाम:
GS66502B-E01-MR
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS66502B 650V GaN Transistor
GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
भाग # Mfg। विवरण स्टक मूल्य
GS66502B-E01-MR
DISTI # 499-GS66502B-E01-MR
GaN SystemsMOSFET 650V Enhancement Mode Transistor
RoHS: Compliant
1533
  • 1:$9.3500
  • 10:$9.0500
  • 25:$8.6300
  • 250:$8.0000
  • 1000:$7.7800
GS66502B-E01-MR
DISTI # GS66502B-E01-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
750
  • 250:$7.6900
छवि भाग # विवरण
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

MOSFET 100V 45A E-Mode GaN
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

MOSFET 650V 15A E-Mode GaN
GS66516T-E02-MR

Mfr.#: GS66516T-E02-MR

OMO.#: OMO-GS66516T-E02-MR

MOSFET 650V 60A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
UCC24612-1DBVR

Mfr.#: UCC24612-1DBVR

OMO.#: OMO-UCC24612-1DBVR

Switching Controllers SYNC RECTIFIER FLYBACK
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
UCC24612-1DBVR

Mfr.#: UCC24612-1DBVR

OMO.#: OMO-UCC24612-1DBVR-TEXAS-INSTRUMENTS

SYNC RECTIFIER FLYBACK
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR-TEXAS-INSTRUMENTS

LMG1020YFFR BEARCAT 6-PIN WCSP
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
GS66502B-E01-MR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ९.३५
US$ ९.३५
10
US$ ९.०५
US$ ९०.५०
25
US$ ८.६३
US$ २१५.७५
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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