GS-065-008-1-L

Mfr. #:: GS-065-008-1-L
निर्माता:: GaN Systems
विवरण:: MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: GS-065-008-1-L डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: GS-065-008-1-L थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: GaN प्रणाली

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: गान सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PDFN-6

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 650 V

आईडी - निरन्तर ड्रेन वर्तमान:: 8 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 541 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.4 V

Vgs - गेट-स्रोत भोल्टेज:: - 10 V to 7 V

Qg - गेट चार्ज:: 1.5 nC

न्यूनतम परिचालन तापमान:: - 40 C

अधिकतम परिचालन तापमान:: + 150 C

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: रील

शृङ्खला:: GS-065

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: GaN प्रणाली

नमी संवेदनशील:: हो

उत्पादन प्रकार:: MOSFET

कारखाना प्याक मात्रा:: 250

उपश्रेणी:: MOSFETs

भाग # उपनाम:: GS-065-008-1-L-E01-MR

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GS-065-008-1-L थप जानकारी

GS-065-0xx 650V Enhancement Mode GaN Transistors: GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LMG1205YFXR OMO.#: OMO-LMG1205YFXR	Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
	Mfr.#: GS66502B-E01-MR OMO.#: OMO-GS66502B-E01-MR	MOSFET 650V Enhancement Mode Transistor
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR	MOSFET 650V 22A E-Mode GaN
	Mfr.#: GS66504B-E01-MR OMO.#: OMO-GS66504B-E01-MR	MOSFET 650V 15A E-Mode GaN
	Mfr.#: SN74LVC1G08DCKR OMO.#: OMO-SN74LVC1G08DCKR	Logic Gates Single 2-Input Pos
	Mfr.#: NC7SZ00P5X OMO.#: OMO-NC7SZ00P5X	Logic Gates UHS 2-Inp NAND Gate
	Mfr.#: DSC1001DI2-006.7800 OMO.#: OMO-DSC1001DI2-006-7800-MICROCHIP-TECHNOLOGY	Oscillator MEMS 6.78MHz ±25ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN SMD Tube
	Mfr.#: SN74LVC1G08DCKR OMO.#: OMO-SN74LVC1G08DCKR-TEXAS-INSTRUMENTS	Logic Gates Single 2-Input Pos
	Mfr.#: GS66502B-E01-MR OMO.#: OMO-GS66502B-E01-MR-1190	MOSFET 650V Enhancement Mode Transisto
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR-1190	MOSFET 650V 22A E-Mode GaN

उपलब्धता

स्टक:: 506
अर्डर मा:: 2489
मात्रा प्रविष्ट गर्नुहोस्:

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GS-065-008-1-L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes