SIHB30N60E-E3

SIHB30N60E-E3
Mfr. #:
SIHB30N60E-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB30N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB30N60E-E3 DatasheetSIHB30N60E-E3 Datasheet (P4-P6)SIHB30N60E-E3 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
29 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
125 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.8 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
85 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
36 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
32 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
63 ns
सामान्य टर्न-अन ढिलाइ समय:
19 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB30N60E, SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 29A D2PAK
***ark
N-CHANNEL 600V
भाग # Mfg। विवरण स्टक मूल्य
SIHB30N60E-E3
DISTI # SIHB30N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 29A D2PAK
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIHB30N60E-E3
    DISTI # SIHB30N60E-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin D2PAK - Tape and Reel (Alt: SIHB30N60E-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
      SIHB30N60E-E3
      DISTI # 781-SIHB30N60E-E3
      Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      RoHS: Compliant
      0
        SIHB30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
        RoHS: Compliant
        Americas -
          छवि भाग # विवरण
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3-VISHAY

          RF Bipolar Transistors MOSFET N-Channel 600V
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

          MOSFET N-CHAN 600V D2PAK
          SIHB30N60E-GE3-CUT TAPE

          Mfr.#: SIHB30N60E-GE3-CUT TAPE

          OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

          नयाँ र मौलिक
          SIHB30N60E

          Mfr.#: SIHB30N60E

          OMO.#: OMO-SIHB30N60E-1190

          नयाँ र मौलिक
          SIHB30N60E-GE3

          Mfr.#: SIHB30N60E-GE3

          OMO.#: OMO-SIHB30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A D2PAK
          SIHB30N60EGE3

          Mfr.#: SIHB30N60EGE3

          OMO.#: OMO-SIHB30N60EGE3-1190

          Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          4000
          मात्रा प्रविष्ट गर्नुहोस्:
          SIHB30N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          बाट सुरु गर्नुहोस्
          नवीनतम उत्पादनहरू
          • Si7655DN -20 V P-Channel MOSFET
            Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
          • P-Channel MOSFETs
            Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
          • Compare SIHB30N60E-E3
            SIHB30N60E vs SIHB30N60EE3 vs SIHB30N60EGE3
          • Si8410DB Chipscale N-Channel MOSFET
            Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
          • 50 A VRPower® Solution (DrMOS)
            Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
          • PowerPAIR®
            Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
          Top