We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SIHB30N60E-GE3 DISTI # V36:1790_09219022 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK RoHS: Compliant | 0 |
|
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube | 776In Stock |
|
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB30N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| SIHB30N60E-GE3 DISTI # 78-SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 279 |
|
| SIHB30N60E-E3 DISTI # 781-SIHB30N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 | |
| SIHB30N60E-GE3 | Vishay Intertechnologies | 1000 | ||
| SIHB30N60E-GE3 | Vishay Intertechnologies | 96 | ||
| SIHB30N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1000 | |
| SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SIHB30N60AEL-GE3 OMO.#: OMO-SIHB30N60AEL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3-VISHAY |
RF Bipolar Transistors MOSFET N-Channel 600V |
|
Mfr.#: SIHB30N60AEL-GE3 OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY |
MOSFET N-CHAN 600V D2PAK |
|
Mfr.#: SIHB30N60E-GE3-CUT TAPE |
नयाँ र मौलिक |
|
|
Mfr.#: SIHB30N60E OMO.#: OMO-SIHB30N60E-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SIHB30N60E-GE3 OMO.#: OMO-SIHB30N60E-GE3-VISHAY |
MOSFET N-CH 600V 29A D2PAK |
|
|
Mfr.#: SIHB30N60EGE3 OMO.#: OMO-SIHB30N60EGE3-1190 |
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |