PartNumber | SIHB30N60E-E3 | SIHB30N60E | SIHB30N60E-GE3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-CH 600V 29A D2PAK | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 29 A | - | - |
Rds On Drain Source Resistance | 125 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 85 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 250 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | E | - | - |
Brand | Vishay / Siliconix | - | - |
Fall Time | 36 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 32 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 63 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Unit Weight | 0.050717 oz | - | - |