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SIHB30N60AEL-GE3

SIHB30N60AEL-GE3
Mfr. #:
SIHB30N60AEL-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CHAN 600V D2PAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB30N60AEL-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHB30N60AEL-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB30N60AEL-GE3
DISTI # V36:1790_22298405		Vishay IntertechnologiesEL Series Power MOSFET D2PAK (TO-263), 120 m¿ @ 10V0
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		28In Stock
    • 500:$3.9137
    • 100:$4.5975
    • 10:$5.6110
    • 1:$6.2500
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		28In Stock
    • 500:$3.9137
    • 100:$4.5975
    • 10:$5.6110
    • 1:$6.2500
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2000:$3.0520
    • 1000:$3.2046
    SIHB30N60AEL-GE3
    DISTI # 59AC7371    		Vishay IntertechnologiesN-CHANNEL 600V0
    • 2500:$2.7700
    • 1000:$2.9900
    • 500:$3.3600
    • 100:$3.7100
    • 50:$4.1900
    • 25:$4.5400
    • 10:$4.9100
    • 1:$5.5400
    SIHB30N60AEL-GE3
    DISTI # 78-SIHB30N60AEL-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		654
    • 1:$6.1000
    • 10:$5.0500
    • 100:$4.1600
    • 250:$4.0300
    • 500:$3.6100
    • 1000:$3.0500
    • 2500:$2.8900
    SIHB30N60AEL-GE3
    DISTI # 2932920    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 28A, 150DEG C, 250W
    RoHS: Compliant    		2
    • 500:£2.8100
    • 250:£3.1400
    • 100:£3.2300
    • 10:£3.9300
    • 1:£5.2400
    छवि भाग # विवरण
    SIHB30N60AEL-GE3

    Mfr.#: SIHB30N60AEL-GE3

    OMO.#: OMO-SIHB30N60AEL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB30N60E-E3

    Mfr.#: SIHB30N60E-E3

    OMO.#: OMO-SIHB30N60E-E3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB30N60E-E3

    Mfr.#: SIHB30N60E-E3

    OMO.#: OMO-SIHB30N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 600V
    SIHB30N60AEL-GE3

    Mfr.#: SIHB30N60AEL-GE3

    OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V D2PAK
    SIHB30N60E-GE3-CUT TAPE

    Mfr.#: SIHB30N60E-GE3-CUT TAPE

    OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

    		 नयाँ र मौलिक
    SIHB30N60E

    Mfr.#: SIHB30N60E

    OMO.#: OMO-SIHB30N60E-1190

    		 नयाँ र मौलिक
    SIHB30N60E-GE3

    Mfr.#: SIHB30N60E-GE3

    OMO.#: OMO-SIHB30N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 29A D2PAK
    SIHB30N60EGE3

    Mfr.#: SIHB30N60EGE3

    OMO.#: OMO-SIHB30N60EGE3-1190

    		 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB30N60AEL-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.१६
    US$ ४.१६
    10
    US$ ३.९५
    US$ ३९.४७
    100
    US$ ३.७४
    US$ ३७३.९५
    500
    US$ ३.५३
    US$ १ ७६५.९०
    1000
    US$ ३.३२
    US$ ३ ३२४.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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