 | | | |
| PartNumber | SI4800B | SI4800BCY-T1-E3 | SI4800BD |
| Description | |||
| Manufacturer | VISHAY | - | VISHAY |
| Product Category | FETs - Single | - | IC Chips |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4800BDY-T1-E3 | MOSFET 30V 9A 2.5W | |
| SI4800BDY-T1-GE3 | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V | ||
| SI4800BDY-T1-E3-CUT TAPE | नयाँ र मौलिक | ||
| SI4800BDY-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SI4800B | नयाँ र मौलिक | ||
| SI4800BCY-T1-E3 | नयाँ र मौलिक | ||
| SI4800BD | नयाँ र मौलिक | ||
| SI4800BDY | MOSFET 30V 9A 2.5W | ||
| SI4800BDY-T | नयाँ र मौलिक | ||
| SI4800BDY-T1 | नयाँ र मौलिक | ||
| SI4800BDY-T1-E | नयाँ र मौलिक | ||
| SI4800BDY-T1-E3 SOP8 | नयाँ र मौलिक | ||
| SI4800BDY-T1-E3. | Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di | ||
| SI4800BDY-TI-E3 | नयाँ र मौलिक | ||
Vishay |
SI4800BDY-T1-E3 | MOSFET N-CH 30V 6.5A 8-SOIC | |
| SI4800BDY-T1-GE3 | MOSFET N-CH 30V 6.5A 8-SOIC |