SI4800BDY-T1-E3

SI4800BDY-T1-E3
Mfr. #:
SI4800BDY-T1-E3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 6.5A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4800BDY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4800BDY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4800BDY-T1
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
1.3W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
6.5A (Ta)
Rds-on-max-Id-Vgs
18.5 mOhm @ 9A, 10V
Vgs-th-max-Id
1.8V @ 250μA
गेट-चार्ज-Qg-Vgs
13nC @ 5V
Pd-शक्ति-डिसिपेशन
1.3 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
12 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
25 V
आईडी-निरन्तर-नाली-वर्तमान
6.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
18.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
32 ns
सामान्य-टर्न-अन-डिले-समय
7 ns
च्यानल-मोड
वृद्धि
Tags
SI4800BDY-T1-E3, SI4800BDY-T1-E, SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4800BDY-T1-E3 N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 9A, SOIC
***ronik
N-CH 30V 9A 19mOhm SO-8 RoHSconf
***ure Electronics
N-CH REDUCED QG, FAST SWITCHING MOSF
***ment14 APAC
N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:8
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4800BDY-T1-E3
DISTI # V72:2272_09216568
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
390
  • 250:$0.4116
  • 100:$0.4782
  • 25:$0.5928
  • 10:$0.5957
  • 1:$0.6897
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4565In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4565In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.3066
SI4800BDY-T1-E3
DISTI # 30150432
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
390
  • 250:$0.4116
  • 100:$0.4782
  • 25:$0.5928
  • 21:$0.5957
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 360
  • 1:$0.3169
  • 25:$0.3159
  • 62:$0.3149
  • 125:$0.3139
  • 312:$0.3129
  • 625:$0.3129
  • 1250:$0.3119
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 2500
  • 2500:$0.2999
  • 5000:$0.2989
  • 10000:$0.2979
  • 15000:$0.2979
  • 25000:$0.2969
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.3999
  • 5000:€0.2729
  • 10000:€0.2349
  • 15000:€0.2169
  • 25000:€0.2019
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4800BDY-T1-E3
    DISTI # 06J7845
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7845)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.8800
    • 10:$0.7210
    • 25:$0.6650
    • 50:$0.6090
    • 100:$0.5530
    • 250:$0.5150
    • 500:$0.4760
    SI4800BDY-T1-E3
    DISTI # 06J7845
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):18.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,No. of Pins:8Pins, RoHS Compliant: Yes651
    • 1:$0.4550
    • 10:$0.4550
    • 25:$0.4550
    • 50:$0.4170
    • 100:$0.4170
    • 250:$0.4170
    • 500:$0.3850
    SI4800BDY-T1-E3.
    DISTI # 28AC2144
    Vishay IntertechnologiesN-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: NO2500
    • 1:$0.3000
    • 5000:$0.2990
    • 10000:$0.2980
    • 25000:$0.2970
    SI4800BDY-T1-E3
    DISTI # 70026225
    Vishay SiliconixSI4800BDY-T1-E3 N-channel MOSFET Transistor,6.5 A,30 V,8-Pin SOIC
    RoHS: Compliant
    0
    • 2500:$0.3700
    • 5000:$0.3600
    • 7500:$0.3300
    SI4800BDY-T1-E3/BKN
    DISTI # 70026360
    Vishay SiliconixN-Channel REDUCED QG,Fast Switching MOSFET
    RoHS: Compliant
    0
    • 1:$0.6800
    • 100:$0.6500
    • 250:$0.6100
    • 500:$0.5800
    • 1000:$0.5500
    SI4800BDY-T1-E3
    DISTI # 781-SI4800BDY-E3
    Vishay IntertechnologiesMOSFET 30V 9A 2.5W
    RoHS: Compliant
    2984
    • 1:$0.8800
    • 10:$0.7210
    • 100:$0.5530
    • 500:$0.4760
    • 1000:$0.3750
    • 2500:$0.3500
    SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET2089
    • 953:$0.1875
    • 201:$0.2100
    • 1:$0.6000
    SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET20
    • 9:$0.4500
    • 1:$0.6000
    SI4800BDY-T1-E3Vishay Intertechnologies 2568
      SI4800BDY-T1-E3Vishay Intertechnologies 1732
        SI4800BDY-T1-E3TR-NDVishay Intertechnologies 1732
          SI4800BDY-T1-E3Vishay Siliconix 18937
            SI4800BDY-T1-E3
            DISTI # SI4800BDY-E3
            Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,30V,7A,2.5W,SO83509
            • 5:$0.3300
            • 25:$0.3100
            • 100:$0.2700
            • 500:$0.2300
            • 2500:$0.2000
            SI4800BDYT1E3Vishay Intertechnologies 
            RoHS: Compliant
            Europe - 1575
              SI4800BDY-T1-E3Vishay IntertechnologiesINSTOCK7500
                SI4800BDY-T1-E3Vishay IntertechnologiesMOSFET 30V 9A 2.5WAmericas - 2500
                  SI4800BDY-T1-E3
                  DISTI # C1S806000590040
                  Vishay IntertechnologiesMOSFETs
                  RoHS: Compliant
                  390
                  • 250:$0.4148
                  • 100:$0.4795
                  • 25:$0.5911
                  • 10:$0.5934
                  छवि भाग # विवरण
                  SI4800BDY-T1-E3

                  Mfr.#: SI4800BDY-T1-E3

                  OMO.#: OMO-SI4800BDY-T1-E3

                  MOSFET 30V 9A 2.5W
                  SI4800BDY-T1-E3-CUT TAPE

                  Mfr.#: SI4800BDY-T1-E3-CUT TAPE

                  OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190

                  नयाँ र मौलिक
                  SI4800BDY-T1-GE3-CUT TAPE

                  Mfr.#: SI4800BDY-T1-GE3-CUT TAPE

                  OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190

                  नयाँ र मौलिक
                  SI4800B

                  Mfr.#: SI4800B

                  OMO.#: OMO-SI4800B-1190

                  नयाँ र मौलिक
                  SI4800BCY-T1-E3

                  Mfr.#: SI4800BCY-T1-E3

                  OMO.#: OMO-SI4800BCY-T1-E3-1190

                  नयाँ र मौलिक
                  SI4800BDY-T

                  Mfr.#: SI4800BDY-T

                  OMO.#: OMO-SI4800BDY-T-1190

                  नयाँ र मौलिक
                  SI4800BDY-T1

                  Mfr.#: SI4800BDY-T1

                  OMO.#: OMO-SI4800BDY-T1-1190

                  नयाँ र मौलिक
                  SI4800BDY-T1-E

                  Mfr.#: SI4800BDY-T1-E

                  OMO.#: OMO-SI4800BDY-T1-E-1190

                  नयाँ र मौलिक
                  SI4800BDY-T1-E3 SOP8

                  Mfr.#: SI4800BDY-T1-E3 SOP8

                  OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190

                  नयाँ र मौलिक
                  SI4800BDY-T1-E3.

                  Mfr.#: SI4800BDY-T1-E3.

                  OMO.#: OMO-SI4800BDY-T1-E3--1190

                  Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
                  उपलब्धता
                  स्टक:
                  Available
                  अर्डर मा:
                  3000
                  मात्रा प्रविष्ट गर्नुहोस्:
                  SI4800BDY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
                  सन्दर्भ मूल्य (USD)
                  मात्रा
                  एकाइ मूल्य
                  विस्तार मूल्य
                  1
                  US$ ०.२८
                  US$ ०.२८
                  10
                  US$ ०.२७
                  US$ २.६७
                  100
                  US$ ०.२५
                  US$ २५.३१
                  500
                  US$ ०.२४
                  US$ ११९.५५
                  1000
                  US$ ०.२२
                  US$ २२५.००
                  बाट सुरु गर्नुहोस्
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