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Quality GuaranteesWe provide 90-360 days warranty.
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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SI4800BDY-T1-E3/BKN DISTI # 70026360 | Vishay Siliconix | N-Channel REDUCED QG,Fast Switching MOSFET RoHS: Compliant | 0 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3 |
MOSFET 30V 9A 2.5W |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3 |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
|
Mfr.#: SI4800BDY-T1-E3-CUT TAPE |
नयाँ र मौलिक |
|
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Mfr.#: SI4800BDY-T1-GE3-CUT TAPE |
नयाँ र मौलिक |
|
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Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190 |
नयाँ र मौलिक |
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Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190 |
नयाँ र मौलिक |
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
|
|
Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
|
|
Mfr.#: SI4800BDY-TI-E3 OMO.#: OMO-SI4800BDY-TI-E3-1190 |
नयाँ र मौलिक |