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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SI4800BDY-T1-GE3 DISTI # V72:2272_09216570 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4727In Stock |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4727In Stock |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4800BDY-T1-GE3 DISTI # 25790146 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4800BDY-T1-GE3 DISTI # 16P3753 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins , RoHS Compliant: Yes | 0 |
|
| SI4800BDY-T1-GE3. DISTI # 16AC0256 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins , RoHS Compliant: No | 0 |
|
| SI4800BDY-T1-GE3 DISTI # 781-SI4800BDY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant | 154 |
|
| SI4800BDYT1GE3 | Vishay Intertechnologies | RoHS: Compliant | Europe - 2500 | |
| SI4800BDY-T1-GE3 DISTI # C1S803603715371 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3 |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
|
Mfr.#: SI4800BDY-T1-E3-CUT TAPE |
नयाँ र मौलिक |
|
|
Mfr.#: SI4800BDY-T1-GE3-CUT TAPE |
नयाँ र मौलिक |
|
|
Mfr.#: SI4800BDY-T OMO.#: OMO-SI4800BDY-T-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190 |
नयाँ र मौलिक |
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
|
|
Mfr.#: SI4800BDY-T1-E3 SOP8 |
नयाँ र मौलिक |
|
|
Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di |
|
|
Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |