 | | | |
| PartNumber | BSC100N06LS3 G | BSC100N10NSF G | BSC100N06LS3GATMA1 |
| Description | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | 60 V |
| Id Continuous Drain Current | 50 A | 90 A | 50 A |
| Rds On Drain Source Resistance | 7.8 mOhms | 10 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 4 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 45 nC | 44 nC | 34 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 156 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 2 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 32 S | 61 S, 31 S | 32 S |
| Fall Time | 8 ns | 7 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 58 ns | 23 ns | 58 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 26 ns | 19 ns |
| Typical Turn On Delay Time | 8 ns | 18 ns | 8 ns |
| Part # Aliases | BSC100N06LS3GATMA1 BSC1N6LS3GXT SP000453664 | BSC100N10NSFGATMA1 BSC1N1NSFGXT SP000379595 | BSC100N06LS3 BSC1N6LS3GXT G SP000453664 |
| Unit Weight | 0.003527 oz | - | 0.007055 oz |
| Type | - | OptiMOS 2 Power-Transistor | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC100N06LS3 G | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
| BSC110N06NS3 G | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| BSC117N08NS5ATMA1 | MOSFET N-Ch 80V 49A TDSON-8 | ||
| BSC118N10NS G | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC110N06NS3GATMA1 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| BSC100N10NSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | ||
| BSC100N06LS3GATMA1 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| BSC109N10NS3 G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3 | ||
| BSC105N10LSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | ||
| BSC110N15NS5ATMA1 | MOSFET MV POWER MOS | ||
| BSC112N06LDATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSC100N06LS3 G | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R | ||
| BSC100N06LS3GATMA1 | MOSFET N-CH 60V 50A TDSON-8 | ||
| BSC100N10NSFGATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC106N025S G | MOSFET N-CH 25V 30A TDSON-8 | ||
| BSC109N10NS3 G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3 | ||
| BSC109N10NS3GATMA1 | MOSFET N-CH 100V 63A 8TDSON | ||
| BSC110N06NS3 G | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| BSC110N15NS5ATMA1 | MOSFET N-CH 150V 76A 8TDSON | ||
| BSC110N06NS3GATMA1 | MOSFET N-CH 60V 50A TDSON-8 | ||
| BSC105N10LSFGATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC118N10NS G | Darlington Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC100N10NSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | ||
| BSC105N10LSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | ||
| BSC117N08NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8 | ||
Infineon Technologies |
BSC118N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC105N10LSFGATMA1 | MOSFET MV POWER MOS | ||
| BSC100N10NSFGXT | Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1) | ||
| BSC109N10NS3GXT | Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1) | ||
| BSC100N03MSGATMA1 , TDZ | नयाँ र मौलिक | ||
| BSC100N06LS3GXT | नयाँ र मौलिक | ||
| BSC105N10LSFGXT | नयाँ र मौलिक | ||
| BSC106N025SG | नयाँ र मौलिक | ||
| BSC110N06NS3GATMA1 , TDZ | नयाँ र मौलिक | ||
| BSC110N06S3G | नयाँ र मौलिक | ||
| BSC110N15NS53 | नयाँ र मौलिक | ||
| BSC118N10NS | नयाँ र मौलिक | ||
| BSC118N10NS3G | नयाँ र मौलिक | ||
| BSC117N08NS5 | नयाँ र मौलिक | ||
| BSC105N10LSFGATMA1-CUT TAPE | नयाँ र मौलिक | ||
| BSC100N06LS | नयाँ र मौलिक | ||
| BSC100N06LS3G | 60V,50A,N Channel Power MOSFET | ||
| BSC100N10NS | नयाँ र मौलिक | ||
| BSC100N10NSFG | 100V,90A,N Channel Power MOSFET | ||
| BSC105N10LS | नयाँ र मौलिक | ||
| BSC105N10LSFG | नयाँ र मौलिक | ||
| BSC109N10NS3G | Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G) | ||
| BSC110N06NS3G | Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: BSC110N06NS3 G) | ||
| BSC110N15NS5 | नयाँ र मौलिक | ||
| BSC118N10NSG | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |