BSC110N06NS3GATMA1

Mfr. #:: BSC110N06NS3GATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: BSC110N06NS3GATMA1 डाटा पाना
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PG-TDSON-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 50 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 11 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 25 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 50 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 1.27 mm

लम्बाइ:: 5.9 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 5.15 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 25 S

पतन समय:: 6 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 77 ns

कारखाना प्याक मात्रा:: 5000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 14 ns

सामान्य टर्न-अन ढिलाइ समय:: 10 ns

भाग # उपनाम:: BSC110N06NS3 BSC11N6NS3GXT G SP000453668

एकाइ वजन:: 0.007055 oz

Tags: BSC110N06N, BSC110N0, BSC110, BSC11, BSC1, BSC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
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BSC110N06NS3GATMA1 विवरण

***ure Electronics: Single N-Channel 60 V 11 mOhm 33 nC OptiMOS Power Mosfet - TDSON-8

*** Source Electronics: Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 56A,D-Pak,PD 110W,VGS+/-20V

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:79A; On Resistance Rds(On):0.0071Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:56A; On Resistance Rds(On):0.0066Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 60V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 99W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a DPAK (TO-252) package, DPAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK

***nell: MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET N-CH 60V 14.2A Automotive 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ure Electronics: MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W

***i-Key: MOSFET N-CH 60V 14.2A/59A TO252

***et: Trans MOSFET N-CH 60V 57A 3-Pin TO-252 T/R

***ical: Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 60V N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGS

***i-Key: MOSFET N-CH 60V 13.3A/57A TO252

***roFlash: Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGS

***ark: MOSFET, N-CH, 60V, 59A, TO-252 ROHS COMPLIANT: YES

***et: MOSFET BVDSS: 41V~60V TO252 T&R 2.5K

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
BSC110N06NS3GATMA1 DISTI # V72:2272_06384841	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R RoHS: Compliant	149	100:$0.5578 25:$0.6516 10:$0.7964 1:$0.9224
BSC110N06NS3GATMA1 DISTI # V36:1790_06384841	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000:$0.3903
BSC110N06NS3GATMA1 DISTI # BSC110N06NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2930In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
BSC110N06NS3GATMA1 DISTI # BSC110N06NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2930In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
BSC110N06NS3GATMA1 DISTI # BSC110N06NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	25000:$0.3325 10000:$0.3360 5000:$0.3491
BSC110N06NS3GATMA1 DISTI # 31653122	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R RoHS: Compliant	149	23:$0.9224
BSC110N06NS3GATMA1 DISTI # BSC110N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC110N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2539 30000:$0.2579 20000:$0.2669 10000:$0.2769 5000:$0.2879
BSC110N06NS3GATMA1 DISTI # SP000453668	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: SP000453668) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.2399 30000:€0.2589 20000:€0.2799 10000:€0.3059 5000:€0.3739
BSC110N06NS3GATMA1 DISTI # 47W3312	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2100	1000:$0.3960 500:$0.5020 100:$0.5680 10:$0.7390 1:$0.8590
BSC110N06NS3GATMA1. DISTI # 27AC1077	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.2650 30000:$0.2700 20000:$0.2790 10000:$0.2900 1:$0.3010
BSC110N06NS3 G DISTI # 726-BSC110N06NS3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	47757	1:$0.8200 10:$0.6990 100:$0.5370 500:$0.4750 1000:$0.3740 5000:$0.3580
BSC110N06NS3GATMA1 DISTI # 726-BSC110N06NS3GATM	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	11243	1:$0.8200 10:$0.6990 100:$0.5370 500:$0.4750 1000:$0.3740 5000:$0.3580
BSC110N06NS3GATMA1 DISTI # 8275303P	Infineon Technologies AG	MOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL	7600	250:£0.4030
BSC110N06NS3GATMA1 DISTI # 2212842	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON	6938	500:£0.3870 250:£0.4130 100:£0.4380 10:£0.6220 1:£0.7560
BSC110N06NS3GATMA1 DISTI # 2212842	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant	5783	5000:$0.5800 1000:$0.5910 500:$0.7490 100:$0.8470 10:$1.1000 1:$1.2800

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SMCJ5.0CA-E3/57T OMO.#: OMO-SMCJ5-0CA-E3-57T	TVS Diodes / ESD Suppressors 1500W 5.0V Bidirect
	Mfr.#: BC846BLT1G OMO.#: OMO-BC846BLT1G	Bipolar Transistors - BJT 100mA 80V NPN
	Mfr.#: BSS138NH6327XTSA2 OMO.#: OMO-BSS138NH6327XTSA2	MOSFET N-Ch 60V 230mA SOT-23-3
	Mfr.#: BSP75N OMO.#: OMO-BSP75N	Power Switch ICs - Power Distribution Smart Low Side 1 Ch 60 V 1.8 W
	Mfr.#: FTSH-105-01-F-DV-K-P-TR OMO.#: OMO-FTSH-105-01-F-DV-K-P-TR	Headers & Wire Housings .050" Micro Terminal Strip
	Mfr.#: SMCJ5.0CA-E3/57T OMO.#: OMO-SMCJ5-0CA-E3-57T-VISHAY	TVS Diodes - Transient Voltage Suppressors 1500W 5.0V Bidirect
	Mfr.#: FTSH-105-01-F-DV-K-P-TR OMO.#: OMO-FTSH-105-01-F-DV-K-P-TR-SAMTEC	Conn Unshrouded Header HDR 10 POS 1.27mm Solder ST SMD T/R
	Mfr.#: BSS138NH6327XTSA2 OMO.#: OMO-BSS138NH6327XTSA2-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 230MA SOT-23
	Mfr.#: ADXL343BCCZ-RL7 OMO.#: OMO-ADXL343BCCZ-RL7-ANALOG-DEVICES	Motion & Position Sensors Accelerometers 3-Axis Low g Digital-Output
	Mfr.#: BC846BLT1G OMO.#: OMO-BC846BLT1G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT 100mA 80V NPN

उपलब्धता

स्टक:: 11
अर्डर मा:: 1994
मात्रा प्रविष्ट गर्नुहोस्:

BSC110N06NS3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.८२~~; ~~US$ ०.८२~~

10: ~~US$ ०.७०~~; ~~US$ ६.९९~~

100: ~~US$ ०.५४~~; ~~US$ ५३.७०~~

500: ~~US$ ०.४८~~; ~~US$ २३७.५०~~

1000: ~~US$ ०.३७~~; ~~US$ ३७४.००~~

बाट सुरु गर्नुहोस्

BSC110N06N 4
BSC110N0 5
BSC110 8
BSC11 28
BSC1 141
BSC 999

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BSC110N06NS3GATMA1

Step1:Vacuum Packaging with PL

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes