BSC100N06LS3GATMA1

Mfr. #:: BSC100N06LS3GATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-CH 60V 50A TDSON-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: BSC100N06LS3GATMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Infineo

उत्पादन कोटि: FETs - एकल

शृङ्खला: OptiMOS

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: BSC100N06LS3 BSC100N06LS3GXT G SP000453664

माउन्टिङ-शैली: SMD/SMT

ट्रेडनेम: OptiMOS

प्याकेज-केस: 8-PowerTDFN

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: PG-TDSON-8

कन्फिगरेसन: एकल

FET-प्रकार: MOSFET एन-च्यानल, धातु अक्साइड

पावर-अधिकतम: 50W

ट्रान्जिस्टर-प्रकार: 1 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 60V

इनपुट-Capacitance-Ciss-Vds: 3500pF @ 30V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 12A (Ta), 50A (Tc)

Rds-on-max-Id-Vgs: 10 mOhm @ 50A, 10V

Vgs-th-max-Id: 2.2V @ 23μA

गेट-चार्ज-Qg-Vgs: 45nC @ 10V

Pd-शक्ति-डिसिपेशन: 50 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 8 ns

उदय-समय: 58 ns

Vgs-गेट-स्रोत-भोल्टेज: +/- 20 V

आईडी-निरन्तर-नाली-वर्तमान: 50 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 60 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: 1.7 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 10 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 19 ns

सामान्य-टर्न-अन-डिले-समय: 8 ns

Qg-गेट-चार्ज: 15 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 63 S

च्यानल-मोड: वृद्धि

Tags: BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC100N06LS3GATMA1 विवरण

***ark: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

*** Source Electronics: OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

***ure Electronics: Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21549In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21549In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	20000In Stock	5000:$0.4243
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3339 10000:$0.3219 20000:$0.3099 30000:$0.2999 50000:$0.2939
BSC100N06LS3GATMA1 DISTI # 47W3311	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	3102	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350 2500:$0.4110 10000:$0.3860
BSC100N06LS3 G DISTI # 726-BSC100N06LS3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350
BSC100N06LS3GATMA1 DISTI # 726-BSC100N06LS3GATM	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350
BSC100N06LS3GATMA1	Infineon Technologies AG	Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	10000Reel	5000:$0.3550
BSC100N06LS3GATMA1 DISTI # 7545298	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK	1395	5:£0.5760 50:£0.3560 250:£0.2900 1250:£0.2780 2500:£0.2740
BSC100N06LS3GATMA1 DISTI # 7545298P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL	1270	50:£0.3560 250:£0.2900 1250:£0.2780 2500:£0.2740
BSC100N06LS3GATMA1 DISTI # 2212844	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant	7982	5:£0.4240 25:£0.3630 100:£0.2870 250:£0.2780 500:£0.2680
BSC100N06LS3GATMA1 DISTI # 2212844	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant	3102	1:$1.5300 10:$1.2900 100:$0.9870

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
	Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
	Mfr.#: BSC100N06LS OMO.#: OMO-BSC100N06LS-1190	नयाँ र मौलिक
	Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G-1190	Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
	Mfr.#: BSC100N06LS3G OMO.#: OMO-BSC100N06LS3G-1190	60V,50A,N Channel Power MOSFET
	Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 50A TDSON-8
	Mfr.#: BSC100N06LS3GXT OMO.#: OMO-BSC100N06LS3GXT-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 3000
मात्रा प्रविष्ट गर्नुहोस्:

BSC100N06LS3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.४४~~; ~~US$ ०.४४~~

10: ~~US$ ०.४२~~; ~~US$ ४.१९~~

100: ~~US$ ०.४०~~; ~~US$ ३९.६८~~

500: ~~US$ ०.३७~~; ~~US$ १८७.३५~~

1000: ~~US$ ०.३५~~; ~~US$ ३५२.७०~~

बाट सुरु गर्नुहोस्

BSC100N06LS3 4
BSC100N06 5
BSC100N0 16
BSC100 21
BSC10 33
BSC1 141
BSC 999

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BSC100N06LS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes