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SIR882DP-T1-GE3

SIR882DP-T1-GE3
Mfr. #:
SIR882DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 100 Volts 60 Amps 83 Watts
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR882DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR882DP-T1-GE3 DatasheetSIR882DP-T1-GE3 Datasheet (P4-P6)SIR882DP-T1-GE3 Datasheet (P7-P9)SIR882DP-T1-GE3 Datasheet (P10-P12)SIR882DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:
SIR882DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
7.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
58 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
83 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIR
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
57 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
36 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
भाग # उपनाम:
SIR882DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SIR882DP-T, SIR882D, SIR882, SIR88, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
***et Europe
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 60A PPAK SO-8
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:7100µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:17.6A; Power Dissipation:5.4W
***ment14 APAC
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SIR882DP-T1-GE3
DISTI # V72:2272_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1
  • 1:$2.7472
SIR882DP-T1-GE3
DISTI # V36:1790_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000000:$1.1040
  • 1500000:$1.1050
  • 300000:$1.1230
  • 30000:$1.1450
  • 3000:$1.1480
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.1057
  • 3000:$1.1482
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.0379
  • 18000:$1.0669
  • 12000:$1.0969
  • 6000:$1.1439
  • 3000:$1.1789
SIR882DP-T1-GE3
DISTI # 94T2661		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
  • 1000:$1.5100
  • 500:$1.7500
  • 250:$2.0100
  • 100:$2.2600
  • 50:$2.5000
  • 25:$2.7000
  • 1:$2.8400
SIR882DP-T1-GE3
DISTI # 86R3813		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes0
  • 10000:$1.0200
  • 6000:$1.0600
  • 4000:$1.1000
  • 2000:$1.2200
  • 1000:$1.2800
  • 1:$1.3600
SIR882DP-T1-GE3
DISTI # 78-SIR882DP-T1-GE3		Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 Watts
RoHS: Compliant		0
  • 1:$2.5100
  • 10:$2.0900
  • 100:$1.6200
  • 500:$1.4100
  • 1000:$1.1700
  • 3000:$1.0900
  • 6000:$1.0500
SIR882DP-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET54
    SIR882DP-T1-GE3
    DISTI # 1859000    		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO8
    RoHS: Compliant    		6
    • 500:$2.1400
    • 100:$2.4400
    • 10:$3.1600
    • 1:$3.8000
    SIR882DP-T1-GE3Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 WattsAmericas - 6000
      SIR882DP-T1-GE3
      DISTI # 1859000      		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO80
      • 500:£1.0900
      • 250:£1.1700
      • 100:£1.2400
      • 10:£1.6200
      • 1:£2.1900
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      SIR882DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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