SIS892DN-T1-GE3

Mfr. #:: SIS892DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 100V 30A 43W 29 mohms @ 10V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIS892DN-T1-GE3 डाटा पाना
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थप जानकारी:: SIS892DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 100 V

आईडी - निरन्तर ड्रेन वर्तमान:: 30 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 29 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.2 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 14.2 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 52 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

शृङ्खला:: SIS

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 22 S

पतन समय:: 9 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 11 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 21 ns

सामान्य टर्न-अन ढिलाइ समय:: 8 ns

भाग # उपनाम:: SIS892DN-GE3

Tags: SIS892, SIS89, SIS8, SIS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS892DN-T1-GE3 विवरण

***ical: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212-8 T/R

***et Europe: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET N-CH 100V 30A 1212-8 PPAK

***ied Electronics & Automation: 100V 30A 43W 29 mohms @ 10V

***: N-CHANNEL 100-V (D-S)

***ark: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C;;RoHS Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:0.024ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:8A; Power Dissipation:3.7W

***ment14 APAC: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Power Dissipation Pd:3.7W; Voltage Vgs Max:20V

SIS892DN-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIS892DN-T1-GE3 DISTI # V36:1790_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.6272 1500000:$0.6274 300000:$0.6440 30000:$0.6717 3000:$0.6762
SIS892DN-T1-GE3 DISTI # V72:2272_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.6182 6000:$0.6424 3000:$0.6762
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.5889 18000:$0.6059 12000:$0.6229 6000:$0.6489 3000:$0.6689
SIS892DN-T1-GE3 DISTI # 86R3819	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.7770 3000:$0.7770
SIS892DN-T1-GE3 DISTI # 94T2851	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$0.8370 500:$1.0400 250:$1.1900 100:$1.3300 50:$1.5000 25:$1.6800 1:$1.8900
SIS892DN-T1-GE3 DISTI # 70459593	Vishay Siliconix	100V 30A 43W 29 mohms @ 10V RoHS: Compliant	0	3000:$0.9840
SIS892DN-T1-GE3 DISTI # 78-SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	8091	1:$1.6000 10:$1.3200 100:$1.0100 500:$0.8740 1000:$0.6890 3000:$0.6430 6000:$0.6110 9000:$0.5880
SIS892DN-T1-GE3.	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -	10:$1.4940 250:$1.0580
SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -
SIS892DN-T1-GE3 DISTI # 1859009	Vishay Intertechnologies	MOSFET,N CH,DIODE,100V,30A,PPAK12128 RoHS: Compliant	0	1000:$1.1300 500:$1.4300 100:$1.7300 10:$2.2200 1:$2.4700
SIS892DN-T1-GE3 DISTI # 2083727	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1 RoHS: Compliant	0	6000:$0.9710 3000:$1.0200

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: TPS2490DGSR OMO.#: OMO-TPS2490DGSR	Hot Swap Voltage Controllers Latchbl Pos Hi-Vltg Pwr-Limiting
	Mfr.#: K2500SRP OMO.#: OMO-K2500SRP	Sidacs 250V
	Mfr.#: NHP220SFT3G OMO.#: OMO-NHP220SFT3G	Rectifiers PUF 2A 200V IN SOD123FL
	Mfr.#: C3D10170H OMO.#: OMO-C3D10170H	Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1700V, 10A
	Mfr.#: TPS7A4901DRBR OMO.#: OMO-TPS7A4901DRBR	LDO Voltage Regulators LDO
	Mfr.#: C1005X7S2A103K050BB OMO.#: OMO-C1005X7S2A103K050BB	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 100V 0.01uF X7S 10% T: 0.5mm
	Mfr.#: 750312504 OMO.#: OMO-750312504-WURTH-ELECTRONICS	FLYBACK XFRM WE-FB LTC3300
	Mfr.#: TPS2490DGSR OMO.#: OMO-TPS2490DGSR-TEXAS-INSTRUMENTS	Hot Swap Voltage Controllers Latchbl Pos Hi-Vltg Pwr-Limiting
	Mfr.#: TPS7A4901DRBR OMO.#: OMO-TPS7A4901DRBR-TEXAS-INSTRUMENTS	LDO Voltage Regulators Vin 3-36V 150mA High PSRR LDO Reg
	Mfr.#: 53048-0310 OMO.#: OMO-53048-0310-410	Headers & Wire Housings RIGHT ANGLE HDR 3P

उपलब्धता

स्टक:: Available
अर्डर मा:: 1991
मात्रा प्रविष्ट गर्नुहोस्:

SIS892DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.६०~~; ~~US$ १.६०~~

10: ~~US$ १.३२~~; ~~US$ १३.२०~~

100: ~~US$ १.०१~~; ~~US$ १०१.००~~

500: ~~US$ ०.८७~~; ~~US$ ४३७.००~~

1000: ~~US$ ०.६९~~; ~~US$ ६८९.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SIS892 4
SIS89 9
SIS8 62
SIS 843

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SIS892DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes