PGA26E07BA

Mfr. #:: PGA26E07BA
निर्माता:: Panasonic
विवरण:: MOSFET MOSFET 600VDC 70mohm X-GaN
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: PGA26E07BA डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: PGA26E07BA थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: Panasonic

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: GaN

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: DFN-8

च्यानलहरूको संख्या:: 1 Channel

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 600 V

आईडी - निरन्तर ड्रेन वर्तमान:: 26 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 70 mOhms

Qg - गेट चार्ज:: 5 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 96 W

कन्फिगरेसन:: एकल

व्यापार नाम:: X-GaN

प्याकेजिङ:: रील

शृङ्खला:: PGA26E07BA

ब्रान्ड:: Panasonic

नमी संवेदनशील:: हो

उत्पादन प्रकार:: MOSFET

कारखाना प्याक मात्रा:: 200

उपश्रेणी:: MOSFETs

भाग # उपनाम:: PGA26E07BA2

Tags: PGA26E0, PGA26, PGA2, PGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PGA26E07BA विवरण

***asonic SCT: GaN Power Devices, 600V, DFN 8x8, RoHS

*** International: PANASONIC/ New

PGA26E07BA थप जानकारी

PGA26E X-GaN Power Transistors: Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions: Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
PGA26E07BA DISTI # 667-PGA26E07BA	Panasonic Electronic Components	MOSFET MOSFET 600VDC 70mohm X-GaN RoHS: Compliant	29	1:$35.4300 10:$33.4600 25:$31.4900
PGA26E07BA-SWEVB008 DISTI # 667-PGA26E07BASWEV8	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB RoHS: Compliant	15	1:$400.0000
PGA26E07BA-SWEVB006 DISTI # 667-PGA26E07BASWEVB6	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB RoHS: Compliant	2	1:$375.0000
PGA26E07BA-DB001 DISTI # 667-PGA26E07BADAB001	Panasonic Electronic Components	Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN RoHS: Compliant	0	1:$55.0000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: UCC27511ADBVR OMO.#: OMO-UCC27511ADBVR	Gate Drivers Single Driver
	Mfr.#: GS-065-008-1-L OMO.#: OMO-GS-065-008-1-L	MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR	MOSFET 650V 22A E-Mode GaN
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR	MOSFET 650V 30A E-Mode GaN
	Mfr.#: STPSC10H065GY-TR OMO.#: OMO-STPSC10H065GY-TR	Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
	Mfr.#: LMG1020YFFR OMO.#: OMO-LMG1020YFFR	Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
	Mfr.#: LMG3410R070RWHT OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS	PWR MGMT MOSFET/PWR DRIVER
	Mfr.#: GS66506T-E01-MR OMO.#: OMO-GS66506T-E01-MR-1190	MOSFET 650V 22A E-Mode GaN
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR-1190	MOSFET 650V 30A E-Mode GaN
	Mfr.#: UCC27511ADBVR OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS	SINGLE DRIVER

उपलब्धता

स्टक:: Available
अर्डर मा:: 3000
मात्रा प्रविष्ट गर्नुहोस्:

PGA26E07BA को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ३५.४३~~; ~~US$ ३५.४३~~

10: ~~US$ ३३.४६~~; ~~US$ ३३४.६०~~

25: ~~US$ ३१.४९~~; ~~US$ ७८७.२५~~

बाट सुरु गर्नुहोस्

PGA26E0 3
PGA26 6
PGA2 152
PGA 421

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PGA26E07BA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes