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BSM180D12P3C007

BSM180D12P3C007
Mfr. #:
BSM180D12P3C007
निर्माता:
Rohm Semiconductor
विवरण:
Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM180D12P3C007 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSM180D12P3C007 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
अलग सेमीकन्डक्टर मोड्युलहरू
RoHS:
Y
उत्पादन:
पावर सेमीकन्डक्टर मोड्युलहरू
प्रकार:
SiC पावर MOSFET
Vgs - गेट-स्रोत भोल्टेज:
- 4 V, 22 V
माउन्टिङ शैली:
स्क्रू माउन्ट
प्याकेज / केस:
मोड्युल
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
BSMx
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
आधा पुल
ब्रान्ड:
ROHM अर्धचालक
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
सामान्य ढिलाइ समय:
50 ns
पतन समय:
50 ns
आईडी - निरन्तर ड्रेन वर्तमान:
180 A
Pd - शक्ति अपव्यय:
880 W
उत्पादन प्रकार:
अलग सेमीकन्डक्टर मोड्युलहरू
उठ्ने समय:
70 ns
कारखाना प्याक मात्रा:
12
उपश्रेणी:
अलग सेमीकन्डक्टर मोड्युलहरू
सामान्य टर्न-अफ ढिलाइ समय:
165 ns
सामान्य टर्न-अन ढिलाइ समय:
50 ns
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.7 V
भाग # उपनाम:
BSM180D12P3C007
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007
***p One Stop Japan
Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
***et Europe
SiC Power Module-1200V-180A
***i-Key
SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
भाग # Mfg। विवरण स्टक मूल्य
BSM180D12P3C007
DISTI # 33952734		ROHM SemiconductorBSM180D12P3C00712
  • 1:$866.2500
BSM180D12P3C007
DISTI # BSM180D12P3C007-ND		ROHM SemiconductorSIC POWER MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		26In Stock
  • 1:$525.7100
BSM180D12P3C007
DISTI # C1S625901693441		ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
RoHS: Compliant		12
  • 10:$601.0000
  • 5:$630.0000
  • 1:$693.0000
BSM180D12P3C007
DISTI # BSM180D12P3C007		ROHM SemiconductorSiC Power Module-1200V-180A (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 1		Europe - 8
  • 1:€490.1900
BSM180D12P3C007
DISTI # BSM180D12P3C007		ROHM SemiconductorSiC Power Module-1200V-180A - Trays (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 12
Container: Tray		Americas - 0
    BSM180D12P3C007
    DISTI # 755-BSM180D12P3C007    		ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant    		31
    • 1:$506.9700
    BSM180D12P3C007ROHM Semiconductor 9
    • 7:$693.0750
    • 5:$739.2800
    • 1:$808.5875
    BSM180D12P3C007
    DISTI # TMOSP12817    		ROHM SemiconductorSiC Power Module 180A 1200V
    RoHS: Compliant    		Stock DE - 16Stock HK - 0Stock US - 0
    • 12:$589.5700
    BSM180D12P3C007
    DISTI # BSM180D12P3C007    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
    RoHS: Compliant    		1
    • 1:€540.0000
    • 4:€480.0000
    • 8:€450.0000
    • 12:€435.0000
    BSM180D12P3C007ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant    		Americas -
      BSM180D12P3C007ROHM SemiconductorRoHS(ship within 1day)12
      • 1:$509.7300
      • 10:$491.3900
      • 50:$476.7200
      • 100:$469.3900
      • 500:$465.7200
      • 1000:$462.0500
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      उपलब्धता
      स्टक:
      31
      अर्डर मा:
      2014
      मात्रा प्रविष्ट गर्नुहोस्:
      BSM180D12P3C007 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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