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BSM300D12P2E001

BSM300D12P2E001
Mfr. #:
BSM300D12P2E001
निर्माता:
Rohm Semiconductor
विवरण:
Discrete Semiconductor Modules 300A SiC Power Module
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM300D12P2E001 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSM300D12P2E001 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
अलग सेमीकन्डक्टर मोड्युलहरू
RoHS:
Y
उत्पादन:
पावर MOSFET मोड्युलहरू
प्रकार:
SiC पावर MOSFET
Vgs - गेट-स्रोत भोल्टेज:
- 6 V, 22 V
माउन्टिङ शैली:
स्क्रू माउन्ट
प्याकेज / केस:
मोड्युल
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
BSMx
प्याकेजिङ:
थोक
कन्फिगरेसन:
आधा पुल
उचाइ:
17 mm
लम्बाइ:
122 mm
चौडाइ:
62 mm
ब्रान्ड:
ROHM अर्धचालक
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
सामान्य ढिलाइ समय:
80 ns
पतन समय:
65 ns
आईडी - निरन्तर ड्रेन वर्तमान:
300 A
Pd - शक्ति अपव्यय:
1875 W
उत्पादन प्रकार:
अलग सेमीकन्डक्टर मोड्युलहरू
उठ्ने समय:
70 ns
कारखाना प्याक मात्रा:
4
उपश्रेणी:
अलग सेमीकन्डक्टर मोड्युलहरू
सामान्य टर्न-अफ ढिलाइ समय:
250 ns
सामान्य टर्न-अन ढिलाइ समय:
80 ns
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.6 V
भाग # उपनाम:
BSM300D12P2E001
Tags
BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001
***p One Stop Japan
Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray
***et Europe
Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
***i-Key
MOSFET 2N-CH 1200V 300A
***ronik
SICDMOS 1200V 300A 1.6V Modul
***
300A SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
BSM300D12P2E001 SiC Power Module
ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.
भाग # Mfg। विवरण स्टक मूल्य
BSM300D12P2E001
DISTI # BSM300D12P2E001-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 300A
RoHS: Compliant
Min Qty: 1
Container: Tray		6In Stock
  • 1:$663.0800
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1:€638.5900
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 4
Container: Bulk		Americas - 0
    BSM300D12P2E001
    DISTI # 755-BSM300D12P2E001    		ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		46
    • 1:$639.4400
    • 5:$600.9100
    BSM300D12P2E001ROHM Semiconductor 3
    • 4:$885.8400
    • 2:$941.2050
    • 1:$968.8875
    BSM300D12P2E001
    DISTI # BSM300D12P2E001    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
    RoHS: Compliant    		4
    • 1:€895.4000
    • 4:€835.4000
    • 8:€805.4000
    • 12:€777.3800
    BSM300D12P2E001
    DISTI # TMOSP11415    		ROHM SemiconductorSICDMOS 1200V 300A 1.6V Modul
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 4:$767.9200
    BSM300D12P2E001-EDEM3
    DISTI # AS0000000000108    		AgileSwitch 
    RoHS: Compliant    		2 in Stock0 on Order
    • 100:$174.2300
    • 50:$182.9400
    • 10:$191.6500
    • 1:$200.3600
    BSM300D12P2E001ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		Americas - 6
      BSM300D12P2E001ROHM SemiconductorRoHS(ship within 1day)4
      • 1:$610.7700
      • 10:$588.8000
      • 50:$571.2300
      • 100:$562.4400
      • 500:$558.0400
      • 1000:$553.6500
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      उपलब्धता
      स्टक:
      45
      अर्डर मा:
      2028
      मात्रा प्रविष्ट गर्नुहोस्:
      BSM300D12P2E001 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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