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BSM080D12P2C008

BSM080D12P2C008
Mfr. #:
BSM080D12P2C008
निर्माता:
Rohm Semiconductor
विवरण:
Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM080D12P2C008 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSM080D12P2C008 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
अलग सेमीकन्डक्टर मोड्युलहरू
RoHS:
Y
उत्पादन:
पावर सेमीकन्डक्टर मोड्युलहरू
प्रकार:
SiC पावर MOSFET
Vgs - गेट-स्रोत भोल्टेज:
- 6 V, 22 V
माउन्टिङ शैली:
स्क्रू माउन्ट
प्याकेज / केस:
मोड्युल
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
BSMx
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
आधा पुल
ब्रान्ड:
ROHM अर्धचालक
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
सामान्य ढिलाइ समय:
20 ns
पतन समय:
40 ns
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Pd - शक्ति अपव्यय:
600 W
उत्पादन प्रकार:
अलग सेमीकन्डक्टर मोड्युलहरू
उठ्ने समय:
30 ns
कारखाना प्याक मात्रा:
12
उपश्रेणी:
अलग सेमीकन्डक्टर मोड्युलहरू
सामान्य टर्न-अफ ढिलाइ समय:
80 ns
सामान्य टर्न-अन ढिलाइ समय:
20 ns
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.6 V
भाग # उपनाम:
BSM080D12P2C008
Tags
BSM0, BSM
Service Guarantees

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
भाग # Mfg। विवरण स्टक मूल्य
BSM080D12P2C008
DISTI # V99:2348_18338525		ROHM SemiconductorBSM080D12P2C0085
  • 12:$299.6900
  • 1:$301.4000
BSM080D12P2C008
DISTI # BSM080D12P2C008-ND		ROHM SemiconductorSIC POWER MODULE-1200V-80A
RoHS: Compliant
Min Qty: 1
Container: Tray		18In Stock
  • 12:$297.4858
  • 1:$301.7400
BSM080D12P2C008
DISTI # 33952737		ROHM SemiconductorBSM080D12P2C00812
  • 1:$508.7500
BSM080D12P2C008
DISTI # 26098825		ROHM SemiconductorBSM080D12P2C0085
  • 1:$301.4000
BSM080D12P2C008
DISTI # BSM080D12P2C008		ROHM SemiconductorTrans MOSFET N 1200V 80A 4-Pin Case C Tray (Alt: BSM080D12P2C008)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€277.3900
  • 500:€286.8900
  • 100:€297.1900
  • 50:€308.1900
  • 25:€319.9900
  • 10:€332.7900
  • 1:€346.6900
BSM080D12P2C008
DISTI # BSM080D12P2C008		ROHM SemiconductorTrans MOSFET N 1200V 80A 4-Pin Case C Tray - Trays (Alt: BSM080D12P2C008)
RoHS: Compliant
Min Qty: 12
Container: Tray		Americas - 0
  • 120:$255.9900
  • 72:$262.2900
  • 48:$268.8900
  • 24:$275.8900
  • 12:$279.4900
BSM080D12P2C008
DISTI # 755-BSM080D12P2C008		ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
RoHS: Compliant		33
  • 1:$354.1500
BSM080D12P2C008
DISTI # C1S625901686177		ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 80A 10-Pin Tray
RoHS: Compliant		12
  • 10:$336.0000
  • 5:$360.0000
  • 1:$407.0000
BSM080D12P2C008
DISTI # TMOS1315		ROHM SemiconductorSiC Power Module 80A 1200V
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 12:$333.6000
BSM080D12P2C008ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
RoHS: Compliant		Americas -
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    उपलब्धता
    स्टक:
    32
    अर्डर मा:
    2015
    मात्रा प्रविष्ट गर्नुहोस्:
    BSM080D12P2C008 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
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    विस्तार मूल्य
    1
    US$ ३५४.१५
    US$ ३५४.१५
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