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IPB009N03LGATMA1

IPB009N03LGATMA1
Mfr. #:
IPB009N03LGATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB009N03LGATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB009N03LGATMA1 DatasheetIPB009N03LGATMA1 Datasheet (P4-P6)IPB009N03LGATMA1 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-7
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
180 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
700 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
227 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
180 S
पतन समय:
22 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
14 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
103 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
भाग # उपनाम:
G IPB009N03L IPB9N3LGXT SP000394657
Tags
IPB009N03LG, IPB00, IPB0, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.95 mOhm 227 nC OptiMOS™ Power Mosfet - D2PAK-7
***ineon
With the new OptiMOS3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime and system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management
***ment14 APAC
MOSFET, N CH, 180A, 30V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
भाग # Mfg। विवरण स्टक मूल्य
IPB009N03LGATMA1
DISTI # V72:2272_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1383
  • 1000:$1.6010
  • 500:$1.6500
  • 250:$1.6980
  • 100:$1.7470
  • 25:$1.9410
  • 10:$2.1570
  • 1:$2.3460
IPB009N03LGATMA1
DISTI # V36:1790_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		1000In Stock
    • 5000:$1.7663
    • 2000:$1.8353
    • 1000:$1.9319
    IPB009N03LGATMA1
    DISTI # 26194931    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		1383
    • 1000:$1.7211
    • 500:$1.7737
    • 250:$1.8254
    • 100:$1.8780
    • 25:$2.0866
    • 10:$2.3188
    • 4:$2.5219
    IPB009N03LGXT
    DISTI # IPB009N03LGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 1000
    • 1000:$1.8076
    • 2000:$1.7424
    • 4000:$1.6794
    • 6000:$1.6229
    • 10000:$1.5940
    IPB009N03LGATMA1
    DISTI # SP000394657    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.8900
    • 2000:€1.5900
    • 4000:€1.4900
    • 6000:€1.3900
    • 10000:€1.2900
    IPB009N03LGATMA1.
    DISTI # 15AC3078    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
    • 10000:$1.6000
    • 6000:$1.6300
    • 4000:$1.6800
    • 2000:$1.7500
    • 1:$1.8100
    IPB009N03LGATMA1
    DISTI # 726-IPB009N03LGATMA1    		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		1000
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03L G
    DISTI # 726-IPB009N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		424
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03LGATMA1
    DISTI # 7545406P    		Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL899
    • 500:£1.5200
    • 250:£1.6900
    • 50:£1.8700
    • 10:£2.0500
    IPB009N03LGATMA1
    DISTI # 1775514    		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant    		1886
    • 500:£1.5300
    • 250:£1.7000
    • 100:£1.7900
    • 10:£2.0600
    • 1:£2.8800
    IPB009N03LGATMA1
    DISTI # 1775514    		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant    		500
    • 5000:$2.4100
    • 2000:$2.5000
    • 1000:$2.6400
    • 500:$3.1300
    • 250:$3.5000
    • 100:$3.6800
    • 10:$4.2500
    • 1:$5.0000
    छवि भाग # विवरण
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1

    		 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G

    		 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 180A TO263-7
    IPB009N03L

    Mfr.#: IPB009N03L

    OMO.#: OMO-IPB009N03L-1190

    		 नयाँ र मौलिक
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G-1190

    		 Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
    IPB009N03LG

    Mfr.#: IPB009N03LG

    OMO.#: OMO-IPB009N03LG-1190

    		 MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
    उपलब्धता
    स्टक:
    900
    अर्डर मा:
    2883
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB009N03LGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.३२
    US$ ३.३२
    10
    US$ २.८२
    US$ २८.२०
    100
    US$ २.४४
    US$ २४४.००
    250
    US$ २.३२
    US$ ५८०.००
    500
    US$ २.०८
    US$ १ ०४०.००
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