IPB009N03L G

IPB009N03L G
Mfr. #:
IPB009N03L G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB009N03L G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB009N03L G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-7
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
180 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
700 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
227 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
180 S
पतन समय:
22 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
14 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
103 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
भाग # उपनाम:
IPB009N03LGATMA1 IPB9N3LGXT SP000394657
एकाइ वजन:
0.056438 oz
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB009N03LGATMA1
DISTI # V72:2272_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 1000:$1.7480
  • 500:$2.1340
  • 250:$2.2700
  • 100:$2.4310
  • 25:$2.5250
  • 10:$2.8060
  • 1:$3.6278
IPB009N03LGATMA1
DISTI # V36:1790_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$1.4610
  • 500000:$1.4630
  • 100000:$1.5960
  • 10000:$1.8090
  • 1000:$1.8440
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.6861
  • 2000:$1.7519
  • 1000:$1.8441
IPB009N03LGATMA1
DISTI # 26194931
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 4:$3.6278
IPB009N03LGXT
DISTI # IPB009N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 10000:$1.5940
  • 6000:$1.6229
  • 4000:$1.6794
  • 2000:$1.7424
  • 1000:$1.8076
IPB009N03L G
DISTI # IPB009N03L G
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 50000:$1.5880
  • 25000:$1.6083
  • 10000:$1.6292
  • 5000:$1.6507
  • 3000:$1.6953
  • 2000:$1.7424
  • 1000:$1.7921
IPB009N03LGATMA1
DISTI # SP000394657
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.5900
  • 1000:€1.8900
IPB009N03LGATMA1.
DISTI # 15AC3078
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
  • 10000:$1.6000
  • 6000:$1.6300
  • 4000:$1.6800
  • 2000:$1.7500
  • 1:$1.8100
IPB009N03L G
DISTI # 726-IPB009N03LG
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
466
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 726-IPB009N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
900
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 7545406P
Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL895
  • 500:£1.5200
  • 250:£1.6900
  • 50:£1.8700
  • 10:£2.0500
IPB009N03LGInfineon Technologies AG 98
  • 3:$2.4600
  • 10:$1.8450
  • 29:$1.5375
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA89
  • 39:$1.5000
  • 11:$2.0000
  • 1:$3.0000
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA78
  • 38:$1.2300
  • 11:$2.0500
  • 1:$3.2800
IPB009N03L G
DISTI # TMOSP8652
Infineon Technologies AGN-CH30V 180A1mOhm TO263-3
RoHS: Compliant
Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$2.2600
  • 2000:$1.7400
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-71885
  • 500:£1.5300
  • 250:£1.7000
  • 100:£1.7900
  • 10:£2.0600
  • 1:£2.8800
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
RoHS: Compliant
500
  • 2000:$2.5000
  • 1000:$2.6400
  • 500:$3.1300
  • 250:$3.5000
  • 100:$3.6800
  • 10:$4.2500
  • 1:$5.0000
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उपलब्धता
स्टक:
38
अर्डर मा:
2021
मात्रा प्रविष्ट गर्नुहोस्:
IPB009N03L G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.३२
US$ ३.३२
10
US$ २.८२
US$ २८.२०
100
US$ २.४४
US$ २४४.००
250
US$ २.३२
US$ ५८०.००
500
US$ २.०८
US$ १ ०४०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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