IPB00

IPB009N03L G vs IPB009N03L vs IPB009N03LG

 
PartNumberIPB009N03L GIPB009N03LIPB009N03LG
DescriptionMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
ManufacturerInfineonINF-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance700 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge227 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min180 S--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time103 ns--
Typical Turn On Delay Time26 ns--
Part # AliasesIPB009N03LGATMA1 IPB9N3LGXT SP000394657--
Unit Weight0.056438 oz--
  • बाट सुरु गर्नुहोस्
  • IPB00 4
  • IPB0 405
  • IPB 1339
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPB009N03LGATMA1 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1 MOSFET N-CH 30V 180A TO263-7
IPB009N03L नयाँ र मौलिक
IPB009N03L G Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03LG MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
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