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STGB20NB41LZT4

STGB20NB41LZT4
Mfr. #:
STGB20NB41LZT4
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors N-Ch Clamped 20 Amp
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGB20NB41LZT4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGB20NB41LZT4 DatasheetSTGB20NB41LZT4 Datasheet (P4-P6)STGB20NB41LZT4 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
STGB20NB41LZT4 थप जानकारी STGB20NB41LZT4 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
D2PAK-3
माउन्टिङ शैली:
SMD/SMT
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
20 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2 V
अधिकतम गेट एमिटर भोल्टेज:
12 V
25 C मा निरन्तर कलेक्टर वर्तमान:
40 A
Pd - शक्ति अपव्यय:
200 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
STGB20NB41LZ
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
40 A
उचाइ:
4.6 mm
लम्बाइ:
10.4 mm
चौडाइ:
9.35 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
निरन्तर कलेक्टर वर्तमान:
20 A
गेट-एमिटर चुहावट वर्तमान:
+/- 660 uA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
IGBTs
व्यापार नाम:
PowerMESH
एकाइ वजन:
0.079014 oz
Tags
STGB20NB4, STGB20NB, STGB20N, STGB20, STGB2, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
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N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK
***nell
IGBT, SINGLE, 412KV, 40A, TO-263-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 412V; Transistor Case Style: TO-263; No. of Pi
***ark
N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH™ IGBT - TO-263
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20 A, 400 V internally clamped IGBT
***ser
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IGBT CLAMP 400V 20A 1,8V TO263
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DIODE ARRAY GP 300V 15A TO247-3
***nell
IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N
***p One Stop Global
Trans IGBT Chip N-CH 380V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
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Insulated Gate Bipolar Transistor, 40A I(C), 380V V(BR)CES, N-Channel, TO-263AA
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STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3
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Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
***icroelectronics SCT
Automotive-grade internally clamped IGBT, D2PAK, Tape and Reel
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IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK
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Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ark
TAPE REEL/N-ch / 20A 600V IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
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Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
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HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
***nell
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current: 35A; Collector Emitter Saturation Voltage Vce(on): 2.45V; Power Dissipation Pd: 298W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
भाग # Mfg। विवरण स्टक मूल्य
STGB20NB41LZT4
DISTI # V72:2272_17691836		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 1:$3.7200
STGB20NB41LZT4
DISTI # 497-4351-1-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-6-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-2-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.1700
  • 1000:$2.2785
STGB20NB41LZT4
DISTI # 26199322		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 2000:$2.1874
  • 1000:$2.2968
STGB20NB41LZT4
DISTI # 25929241		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 4:$3.7200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 6000
  • 1:€5.3500
  • 25:€4.0600
  • 100:€3.5400
  • 250:€3.0900
  • 500:€2.0200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.2900
  • 2000:$2.1900
  • 4000:$2.0900
  • 6000:$1.9900
  • 10000:$1.8900
STGB20NB41LZT4
DISTI # 33X1197		STMicroelectronicsIGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 , RoHS Compliant: Yes437
  • 1:$4.4400
  • 10:$3.9900
  • 100:$3.2700
  • 500:$2.7800
STGB20NB41LZT4
DISTI # 511-STGB20NB41LZ		STMicroelectronicsIGBT Transistors N-Ch Clamped 20 Amp
RoHS: Compliant		0
  • 1000:$2.1700
STGB20NB41LZT4
DISTI # STGB20NB41LZ		STMicroelectronics382V 40A 200W DPak
RoHS: Compliant		970
  • 10:€1.5600
  • 50:€1.3600
  • 200:€1.2600
  • 500:€1.2000
STGB20NB41LZT4STMicroelectronicsINSTOCK1000
    STGB20NB41LZT4
    DISTI # 2353662    		STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant    		437
    • 1:$7.0300
    • 10:$6.3200
    • 100:$5.1800
    • 500:$4.4100
    STGB20NB41LZT4
    DISTI # C1S730200220417    		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$1.5800
    STGB20NB41LZT4
    DISTI # C1S730200437080    		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		994
    • 250:$2.8010
    • 100:$2.8310
    • 25:$3.3380
    • 10:$3.3770
    • 1:$3.6980
    STGB20NB41LZT4
    DISTI # 2353662    		STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant    		437
    • 1:£3.1400
    • 10:£2.0300
    • 100:£1.8500
    • 250:£1.6700
    • 500:£1.4900
    छवि भाग # विवरण
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    Mfr.#: B32932A3104K000

    OMO.#: OMO-B32932A3104K000-EPCOS

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    उपलब्धता
    स्टक:
    960
    अर्डर मा:
    2943
    मात्रा प्रविष्ट गर्नुहोस्:
    STGB20NB41LZT4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.११
    US$ ४.११
    10
    US$ ३.४९
    US$ ३४.९०
    100
    US$ ३.०३
    US$ ३०३.००
    250
    US$ २.८७
    US$ ७१७.५०
    500
    US$ २.५८
    US$ १ २९०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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