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FDFMA3N109

FDFMA3N109
Mfr. #:
FDFMA3N109
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET PowerTrench MOSFET and Schottky Diode
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDFMA3N109 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
MicroFET-6
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
123 mOhms
Vgs - गेट-स्रोत भोल्टेज:
12 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
PowerTrench
प्याकेजिङ:
रील
उचाइ:
0.75 mm
लम्बाइ:
2 mm
उत्पादन:
MOSFET सानो संकेत
शृङ्खला:
FDFMA3N109
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
2 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
12 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
एकाइ वजन:
0.002116 oz
Tags
FDFMA3, FDFMA, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
भाग # Mfg। विवरण स्टक मूल्य
FDFMA3N109
DISTI # V72:2272_06337763		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
  • 1:$0.6695
FDFMA3N109
DISTI # FDFMA3N109FSCT-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSDKR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSTR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 3000:$0.3155
FDFMA3N109
DISTI # 25745010		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 29:$0.5657
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3319
  • 6000:€0.2719
  • 12000:€0.2489
  • 18000:€0.2299
  • 30000:€0.2129
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2359
  • 6000:$0.2339
  • 12000:$0.2309
  • 18000:$0.2279
  • 30000:$0.2219
FDFMA3N109
DISTI # 04M9094		ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$0.2670
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		75450
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FDFMA3N109
DISTI # 512-FDFMA3N109		ON SemiconductorMOSFET PowerTrench MOSFET and Schottky Diode
RoHS: Compliant		5668
  • 1:$0.7400
  • 10:$0.6140
  • 100:$0.3960
  • 1000:$0.3170
  • 3000:$0.2680
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109
DISTI # 1324787RL		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # 1324787		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # C1S541901518927		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R
RoHS: Compliant		1923
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
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उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
FDFMA3N109 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.७४
US$ ०.७४
10
US$ ०.६१
US$ ६.१४
100
US$ ०.४०
US$ ३९.६०
1000
US$ ०.३२
US$ ३१७.००
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